Now showing items 1-2 of 2

    • P-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas 

      Zhang, Z.-H.; Tiam Tan, S.; Kyaw, Z.; Liu W.; Ji, Y.; Ju, Z.; Zhang X.; Wei Sun X.; Volkan Demir H. (2013)
      Here, GaN/AlxGa1-xN heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional ...
    • Transition metal oxides on organic semiconductors 

      Zhao Y.; Zhang, J.; Liu, S.; Gao, Y.; Yang, X.; Leck K.S.; Abiyasa, A. P.; Divayana, Y.; Mutlugun, E.; Tan S.T.; Xiong, Q.; Demir, Hilmi Volkan; Sun, X. W. (Elsevier BV, 2014-04)
      Transition metal oxides (TMOs) on organic semiconductors (OSs) structure has been widely used in inverted organic optoelectronic devices, including inverted organic light-emitting diodes (OLEDs) and inverted organic solar ...