Browsing by Keywords "Optoelectronics"
Now showing items 1-15 of 15
-
Broadband optical modulators based on graphene supercapacitors
(American Chemical Society, 2013)Optical modulators are commonly used in communication and information technology to control intensity, phase, or polarization of light. Electro-optic, electroabsorption, and acousto-optic modulators based on semiconductors ... -
Design and synthesis of self-assembling peptides for fabrication of functional nanomaterials
(Bilkent University, 2016-12)Self-assembling peptides are a class of supramolecular polymers, which exploit noncovalent interactions such as hydrogen bonding, hydrophobic, electrostatic, charge-transfer complex, π-π, and van der Waals interactions to ... -
Electric field dependent optoelectronic nature of InGaN/GaN quantum structures and devices
(Bilkent University, 2012)In the past two decades we have been witnessing the emergence and rapid development of III-Nitride based optoelectronic devices including InGaN/GaN light-emitting diodes (LEDs) and laser diodes with operation ... -
Excitonics of colloidal nanocrystals for next-generation optoelectronics
(Bilkent University, 2016-05)Owing to the tremendous progress in the past decade, semiconductor nanocrystals that are grown by low-temperature solution-phase epitaxy have evolved into highly promising material systems for optoelectronics with ever ... -
Graphene based optoelectronics in the visible spectrum
(Bilkent University, 2015)Graphene, a two dimensional crystal of carbon atoms, emerges as a viable material for optoelectronics because of its electrically-tunable broadband optical properties. Optical response of graphene at visible and near ... -
Graphene-quantum dot hybrid optoelectronics at visible wavelengths
(American Chemical Society, 2018)With exceptional electronic and gate-tunable optical properties, graphene provides new possibilities for active nanophotonic devices. Requirements of very large carrier density modulation, however, limit the operation of ... -
Hybrid J-Aggregate–graphene phototransistor
(American Chemical Society, 2020)J-aggregates are fantastic self-assembled chromophores with a very narrow and extremely sharp absorbance band in the visible and near-infrared spectrum, and hence they have found many exciting applications in nonlinear ... -
Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
(SPIE, 2014)Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are ... -
Microcavity effects in the photoluminescence of hydrogenated amorphous silicon nitride
(SPIE, 1998)Fabry-Perot microcavities are used for the alteration of photoluminescence in hydrogenated amorphous silicon nitride grown with and without ammonia. The photoluminescence is red-near-infrared for the samples grown without ... -
Monolayer diboron dinitride: direct band-gap semiconductor with high absorption in the visible range
(American Physical Society, 2020)We predict a two-dimensional monolayer polymorph of boron nitride in an orthorhombic structure (o-B2N2) using first-principles calculations. Structural optimization, phonon dispersion, and molecular dynamics calculations ... -
Photocurrent generation in a metallic transition-metal dichalcogenide
(American Physical Society, 2018)Photocurrent generation is unexpected in metallic 2D layered materials unless a photothermal mechanism is prevalent. Yet, typical high thermal conductivity and low absorption of the visible spectrum prevent photothermal ... -
Plasmonically enhanced hot electorn based optoelectronic devices
(Bilkent University, 2015-06)Hot electron based optoelectronic devices have been regarded as cost-e ective candidates to their conventional counterparts. The efficiency of conventional optoelectronic devices that rely on semiconductor photo-absorbers ... -
Selective-area high-quality germanium growth for monolithic integrated optoelectronics
(Institute of Electrical and Electronics Engineers, 2012-03-02)Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth ... -
Spatially Selective Assembly of Quantum Dot Light Emitters in an LED Using Engineered Peptides
(American Chemical Society, 2011-02-23)Semiconductor nanocrystal quantum dots are utilized in numerous applications in nano- and biotechnology. In device applications, where several different material components are involved, quantum dots typically need to be ... -
Strain engineering of electronic and optical properties of monolayer diboron dinitride
(American Physical Society, 2021-11-29)We studied the effect of strain engineering on the electronic, structural, mechanical, and optical properties of orthorhombic diboron dinitride (o-B2N2) through first-principles calculations. The 1.7-eV direct band gap ...
