Now showing items 1-4 of 4

    • Anharmonicity in GaTe layered crystals 

      Aydinli, A.; Gasanly, N. M.; Uka, A.; Efeoglu, H. (Wiley-VCH Verlag GmbH & Co. KGaA, 2002)
      The temperature dependencies (10-300 K) of seven Raman-active mode frequencies in layered semiconductor gallium telluride have been measured in the frequency range from 25 to 300 cm -1. Softening and broadening of the ...
    • Anharmonicity of zone-center optical phonons: Raman scattering spectra of GaSe0.5S0.5 layered crystal 

      Gasanly, N. M.; Aydinli, A.; Kocabas, C.; Özkan H. (IOPscience, 2002)
      The temperature dependencies (10-300 K) of the eight Raman-active mode frequencies and linewidths in GaSe0.5S0.5 layered crystal have been measured in the frequency range from 10 to 320 cm-1. We observed softening and ...
    • Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel 

      Gökden, S.; Tülek, R.; Teke, A.; Leach, J. H.; Fan, Q.; Xie, J.; Özgür, Ü.; Morkoç, H.; Lisesivdin, S. B.; Özbay, Ekmel (IOP Publishing, 2010-03-16)
      The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it is expected ...
    • Theoretical assessment of electronic transport in InN 

      Bulutay, C.; Ridley, B. K. (Elsevier, 2004)
      Among the group-III nitrides, InN displays markedly unusual electronic transport characteristics due to its smaller effective mass, high peak velocity and high background electron concentration. First, a non-local empirical ...