Browsing by Keywords "Optical output power"

Now showing items 1-3 of 3

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

Zhang, Z.-H.; Tan, S.T.; Liu W.; Ju, Z.; Zheng, K.; Kyaw, Z.; Ji, Y.; Hasanov, N.; Sun X.W.; Demir, Hilmi Volkan (Optical Society of American (OSA), 2013)

This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating ...
Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering

Zhang, Zi-Hui; Ju, Z.; Liu W.; Tan S.T.; Ji Y.; Kyaw, Z.; Zhang X.; Hasanov N.; Sun, X. W.; Demir, Hilmi Volkan (Optical Society of America, 2014)

The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes ...
A PN-type quantum barrier for InGaN/GaN light emitting diodes

Zhang, Z.-H.; Tan, S.T.; Ji, Y.; Liu W.; Ju, Z.; Kyaw, Z.; Sun X.W.; Demir, Hilmi Volkan (Optical Society of American (OSA), 2013)

In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the ...