Browsing by Keywords "Optical output power"
Now showing items 1-3 of 3
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Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
(Optical Society of American (OSA), 2013)This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating ... -
Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering
(Optical Society of America, 2014)The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes ... -
A PN-type quantum barrier for InGaN/GaN light emitting diodes
(Optical Society of American (OSA), 2013)In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the ...