Now showing items 1-8 of 8

    • 1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector 

      Necmi, B.; Kimukin, I.; Özbay, Ekmel; Tuttle, G. (IEEE, Piscataway, NJ, United States, 2000)
      GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.
    • 45 GHz bandwidth-efficiency resonant cavity enhanced ITO-Schottky photodiodes 

      Bıyıklı, Necmi; Kimukin, İbrahim; Aytür, Orhan; Özbay, Ekmel; Gökkavas, M.; Ünlü, M. S. (OSA, 2001)
      We demonstrated high-performance resonant cavity enhanced ITO-Schottky photodiodes. We achieved a peak efficiency of 75% around 820 nm with a 3-dB bandwidth of 60 GHz resulting in a bandwidth-efficiency product of 45 GHz.
    • High-performance 1.55 μm resonant cavity enhanced photodetector 

      Kimukin, İbrahim; Bıyıklı, Necmi; Özbay, Ekmel (IEEE, 2002)
      A high speed and high efficiency resonant cavity enhanced InGaAs based photodetector was demonstrated. A peak quantum efficiency of 66% was measured along with 31 GHz bandwidth with the device. The photoresponse was found ...
    • High-performance solar-blind AlGaN photodetectors 

      Özbay, Ekmel; Bıyıklı, Necmi; Kimukin, İbrahim; Tut, Turgut; Kartaloğlu, Tolga; Aytür, Orhan (IEEE, 2004)
      High-performance aluminum gallium nitride (AlGaN)-based solar-blind (SB) photodetectors were demonstrated using different device structures. The Al x-Ga1-xN layers structure were grown by metalorganic chemical vapor ...
    • High-speed resonant-cavity-enhanced Schottky photodiodes 

      Ata, Erhan P.; Bıyıklı, Necmi; Demirel, Ekrem; Özbay, Ekmel; Gökkavas, M.; Onat, B.; Ünlü, M. S.; Tuttle, G. (IEEE, 1998)
      The top-illuminated Schottky photodiodes were fabricated by a microwave-compatible monolithic microfabrication process. Fabrication started with formation of ohmic contacts to n+ layers. Mesa isolation was followed by a ...
    • High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes 

      Bıyıklı, Necmi; Kimukin, İbrahim; Aytür, Orhan; Gökkavas, M.; Ulu, G.; Mirin, R.; Christensen, D. H.; Ünlü, M. S.; Özbay, Ekmel (IEEE, 1998)
      Widely-tunable high-speed resonant cavity enhanced p-i-n photodiodes were designed, fabricated and tested for operation around 820 nm. The structure was grown by solid-source MBE on GaAs substrates and features high-reflectivity ...
    • In-situ focused ion beam implantation for the fabrication of a hot electron transistor oscillator structure 

      Kaya I.I.; Dellow, M.W.; Bending, S.J.; Linfield, E.H.; Rose P.D.; Ritchie, D.A.; Jones G.A.C. (1996)
      Recent advances using in situ focused ion beam implantation during an MBE growth interruption have been exploited to fabricate planar GaAs hot electron structures without the need for shallow ohmic contacts. This novel ...
    • Solar-blind A1GaN-based p-i-n photodiodes with low dark current and high detectivity 

      Bıyıklı, Necmi; Kimukin, I.; Aytur, O.; Özbay, Ekmel (IEEE, 2004)
      We report solar-blind AlxGal1-xN-based heterojunction p-i-n photodiodes with low dark current and high detectivity. After the p+ GaN cap layer was recess etched, measured dark current was below 3 fA for reverse bias values ...