Browsing by Keywords "Normally-off"
Now showing items 1-4 of 4
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Design, fabrication, and characterization of normally-off GaN HEMTS
(Bilkent University, 2019-07)GaN-based high-electron-mobility transistors (HEMTs) have been developing rapidly from the time when they were first demonstrated in the 1990s. They have consistently been presented as a displacement technology to silicon ... -
Investigation of a hybrid approach for normally-off GaN HEMTs using fluorine treatment and recess etch techniques
(Institute of Electrical and Electronics Engineers Inc., 2019)A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch ... -
Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment
(Elsevier, 2019)We demonstrate the electrical performances of an AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) with low gate leakage current (Ig). A low gate leakage current as low as the order of ... -
Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology
(Institute of Physics Publishing Ltd., 2021-12-10)In this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressures by using inductively coupled plasma reactive ion etching ...
