Browsing by Keywords "Nitrides"
Now showing items 1-19 of 19
-
AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain
(2008)We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1570 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. The dark currents ... -
Bias in bonding behavior among boron, carbon, and nitrogen atoms in ion implanted a-BN, a-BC, and diamond like carbon films
(2011)In this study, we implanted Nþ and Nþ 2 ions into sputter deposited amorphous boron carbide (a-BC) and diamond like carbon (DLC) thin films in an effort to understand the chemical bonding involved and investigate possible ... -
Characterization of platinum nitride from first-principles calculations
(Institute of Physics Publishing, 2009)We have performed a systematic study of the ground state properties of the zinc-blende, rock-salt, tetragonal, cuprite, fluorite and pyrite phases of platinum nitride by using the plane wave pseudopotential calculations ... -
Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
(Institute of Physics Publishing, 2016)In this study, aluminum nitride (AlN) thin films were deposited at 200 �C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The ... -
Enhanced light scattering with energy downshifting using 16 nm indium nitride nanoparticles for improved thin-film a-Si N-i-P solar cells
(Electrochemical Society Inc., 2015-05)In this work the effect of Indium nitride (InN) nanoparticles (NPs) on the performance of a-Si: H solar cells has been investigated. The average J<inf>sc</inf> of InN NPs coated cells was found 6.76 mA/cm2 which is 16.69% ... -
High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths
(American Institute of Physics Inc., 2017)The dielectric nanophotonics research community is currently exploring transparent material platforms (e.g., TiO2, Si3N4, and GaP) to realize compact high efficiency optical devices at visible wavelengths. Efficient ... -
High-speed solar-blind AlGaN-based metal-semiconductor-metal photodetectors
(Wiley, 2003)Solar-blind AlGaN metal-semiconductor-metal (MSM) photodetectors with fast pulse response have been demonstrated. The devices were fabricated on MOCVD-grown epitaxial Al0.38Ga0.62N layers, using a microwave compatible ... -
Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures
(IEEE, 2015)Hollow cathode plasma-assisted atomic layer deposition is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our efforts on the development of ... -
Hybrid plasmon-phonon polariton bands in graphene-hexagonal boron nitride metamaterials [Invited]
(Optical Society of America, 2017)We theoretically investigate mid-infrared electromagnetic wave propagation in multilayered graphene-hexagonal boron nitride (hBN) metamaterials. Hexagonal boron nitride is a natural hyperbolic material that supports highly ... -
Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
(Wiley - V C H Verlag GmbH & Co. KGaA, 2015)Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current ... -
MOCVD growth and optical properties of non-polar (11-20) a-plane GaN on (10-12) r-plane sapphire substrate
(Elsevier, 2010-11-15)Non-polar a-plane GaN film with crystalline quality and anisotropy improvement is grown by use of high temperature AlN/AlGaN buffer, which is directly deposited on r-plane sapphire by pulse flows. Compared to the a-plane ... -
Modulation of electronic properties in laterally and commensurately repeating graphene and boron nitride composite nanostructures
(American Chemical Society, 2015)Graphene and hexagonal boron nitride (h-BN) nanoribbons of diverse widths and edge geometries are laterally repeated to form commensurate, single-layer, hybrid honeycomb structures. The resulting composite materials appear ... -
Nanocomposite glass coatings containing hexagonal boron nitride nanoparticles
(Pergamon Press, 2016)Glass coatings composed of SiO2-K2O-Li2O, containing non-modified and fluorosilane modified hexagonal boron nitride (hBN) nanoparticles, were prepared on stainless steel plates through sol-gel spin-coating method. Coatings ... -
Nanotribological properties of the h-BN/Au(111) interface: a DFT study
(American Chemical Society, 2019)Understanding the quantum-mechanical origins of friction forces has become increasingly important in the past decades with the advent of nanotechnology. At the nanometer scale, the universal Amontons–Coulomb laws cease to ... -
Negative thermal expansion of group III-Nitride monolayers
(Institute of Physics Publishing Ltd., 2022-05-23)Materials with a negative thermal expansion coefficient have diverse potential applications in electronic engineering. For instance, mixing two materials with negative and positive thermal expansion coefficients can avoid ... -
Polar optical phonon scattering and negative Kromer-Esaki-Tsu differential conductivity in bulk GaN
(Elsevier, 2001-09)GaN is being considered as a viable alternative semiconductor for high-power solid-state electronics. This creates a demand for the characterization of the main scattering channel at high electric fields. The dominant ... -
Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
(2012)We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ... -
Structural and electronic properties of MoS2, WS2, and WS2/MoS2 heterostructures encapsulated with hexagonal boron nitride monolayers
(American Institute of Physics Inc., 2017)In this study, we investigate the structural and electronic properties of MoS2, WS2, and WS2/MoS2 structures encapsulated within hexagonal boron nitride (h-BN) monolayers with first-principles calculations based on density ... -
Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4
(Springer New York LLC, 2007)An extensive theoretical study is performed for wide bandgap crystalline oxides and nitrides, namely, SiO2, GeO2, Al 2O3, Si3N4, and Ge3N 4. Their important polymorphs are considered which are for SiO 2: α-quartz, α- and ...
