Now showing items 1-2 of 2

    • Mosaic structure characterization of the AlInN layer grown on sapphire substrate 

      Arslan, E.; Demirel P.; Çakmak H.; Öztürk, M.K.; Özbay, Ekmel (Hindawi Publishing Corporation, 2014)
      The 150 nm thick, (0001) orientated wurtzite-phase Al1-x InxN epitaxial layers were grown by metal organic chemical vapor deposition on GaN (2.3 μm) template/(0001) sapphire substrate. The indium (x) concentration of the ...
    • Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction 

      Öztürk, M. K.; Hongbo, Y.; SarIkavak, B.; Korçak, S.; Özçelik, S.; Özbay, Ekmel (Springer, 2009-04-18)
      The important structural characteristics of hexagonal GaN in an InGaN/GaN multi quantum well, which was aimed to make a light emitted diode and was grown by metalorganic chemical vapor deposition on c-plain sapphire, are ...