Now showing items 1-4 of 4

    • High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration 

      Yu, H.-Y.; Kobayashi, M.; Jung, W. S.; Okyay, Ali Kemal; Nishi, Y.; Saraswat, K. C. (IEEE, 2009)
      We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) ...
    • Intimate monolithic integration of chip-scale photonic circuits 

      Sabnis, V. A.; Demir, Hilmi Volkan; Fidaner, O.; Zheng, J.-F.; Harris, J. S.; Miller, D. A. B.; Li, N.; Wu, T.-C.; Chen, H.-T.; Houng, Y.-M. (IEEE, 2005)
      In this paper, we introduce a robust monolithic integration technique for fabricating photonic integrated circuits comprising optoelectronic devices (e.g., surface-illuminated photodetectors, waveguide quantum-well modulators, ...
    • Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon 

      Hyung Nam J.; Alkis, S.; Nam, D.; Afshinmanesh F.; Shim J.; Park, J.; Brongersma, M.; Okyay, Ali Kemal; Kamins, T.I.; Saraswat, K. (Elsevier, 2015)
      A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO2) is thermally grown and patterned to define growth window for germanium (Ge). ...
    • Silicon-Germanium multi-quantum well photodetectors in the near infrared 

      Onaran, E.; Onbasli, M. C.; Yesilyurt, A.; Yu, H. Y.; Nayfeh, A. M.; Okyay, Ali Kemal (Optical Society of American (OSA), 2012)
      Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. ...