Now showing items 1-14 of 14

    • 45 GHz bandwidth-efficiency resonant cavity enhanced ITO-Schottky photodiodes 

      Bıyıklı, Necmi; Kimukin, İbrahim; Aytür, Orhan; Özbay, Ekmel; Gökkavas, M.; Ünlü, M. S. (OSA, 2001)
      We demonstrated high-performance resonant cavity enhanced ITO-Schottky photodiodes. We achieved a peak efficiency of 75% around 820 nm with a 3-dB bandwidth of 60 GHz resulting in a bandwidth-efficiency product of 45 GHz.
    • Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodes 

      Tansel, T.; Kutluer, K.; Salihoglu, Ö.; Aydinli, A.; Aslan, B.; Arikan, B.; Kilinc, M. C.; Ergun, Y.; Serincan, U.; Turan, R. (IEEE, 2012)
      The authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ...
    • High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p-i-n photodiodes 

      Butun, B.; Biyikli, N.; Kimukin, I.; Aytur, O.; Özbay, Ekmel; Postigo, P. A.; Silveira, J. P.; Alija, A. R. (American Institute of Physics, 2004)
      The 1.55 μm high-speed operation of GaAs-based p-i-n photodiodes was demonstrated and their design, growth and fabrication were discussed. A resonant-cavity-detector structure was used to selectively enhance the photoresponse ...
    • High-speed InGaAs based resonant cavity enhanced p-i-n photodiodes 

      Kimukin, İbrahim; Bıyıklı, Necmi; Özbay, Ekmel (IEEE, 2001)
      High-speed InGaAs based resonant cavity enhanced photodiodes were discussed. The responses of the photodiodes was measured under high incident optical powers. Bandwidth-efficiency (BWE) product was used to measure the ...
    • High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes 

      Bıyıklı, Necmi; Kimukin, İbrahim; Aytür, Orhan; Gökkavas, M.; Ulu, G.; Mirin, R.; Christensen, D. H.; Ünlü, M. S.; Özbay, Ekmel (IEEE, 1998)
      Widely-tunable high-speed resonant cavity enhanced p-i-n photodiodes were designed, fabricated and tested for operation around 820 nm. The structure was grown by solid-source MBE on GaAs substrates and features high-reflectivity ...
    • In-situ focused ion beam implantation for the fabrication of a hot electron transistor oscillator structure 

      Kaya I.I.; Dellow, M.W.; Bending, S.J.; Linfield, E.H.; Rose P.D.; Ritchie, D.A.; Jones G.A.C. (1996)
      Recent advances using in situ focused ion beam implantation during an MBE growth interruption have been exploited to fabricate planar GaAs hot electron structures without the need for shallow ohmic contacts. This novel ...
    • Initial stages of SiGe epitaxy on Si(001) studied by scanning tunneling microscopy 

      Oral, A.; Ellialtioglu, R. (Elsevier BV, 1995)
      We have studied the initial stages of strained SiGe alloy growth on the Si(001)-(2 × 1) surface by scanning tunneling microscopy. The Si0.36Ge0.64 alloy was grown on the silicon substrate at various coverages (0.13-3.6 ML) ...
    • Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures 

      Akca, B. Imran; Dana, Aykutlu; Aydınlı, Atilla; Rossetti, M.; Li L.; Dagli, N.; Fiore, A. (IEEE, 2007)
      The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs ...
    • Modulation in InAs quantum dot waveguides 

      Akca, B. Imran; Dana, Aykutlu; Aydınlı, Atilla; Rossetti, M.; Li L.; Fiore, A.; Dagli, N. (Optical Society of America, 2007)
      Modulation in molecular beam epitaxy grown self-assembled InAs quantum dot waveguides have been studied at 1500 nm as a function of wavelength and voltage. Enhanced electro-optic coefficients compared to bulk GaAs were ...
    • Optical studies of molecular beam epitaxy grown GaAsSbN / GaAs single quantum well structures 

      Nunna, K.; Iyer, S.; Wu, L.; Bharatan, S.; Li J.; Bajaj, K. K.; Wei, X.; Senger, R. T. (A I P Publishing LLC, 2007)
      In this work, the authors present a systematic study on the variation of the structural and the optical properties of GaAsSbNGaAs single quantum wells (SQWs) as a function of nitrogen concentration. These SQW layers were ...
    • Preferential MBE growth and characterization of SiGe nanoislands on depth-selective Si Pits Etched by Ar+ Plasma 

      Şeker, İ.; Karatutlu, A.; İstengir, S. (Wiley-VCH Verlag, 2018)
      In this study, the size selective deposition of SiGe nanoislands is demonstrated to be possible only in Si nanopits using a molecular beam epitaxy (MBE) system. The depth of the etched Si substrate prepared by Ar+ plasma ...
    • Raman and TEM studies of Ge nanocrystal formation in SiOx: Ge/SiOx multilayers 

      Dana, Aykutlu; Aǧan, S.; Tokay, S.; Aydınlı, Atilla; Finstad, T. G. (Wiley, 2007)
      Alternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray ...
    • Raman scattering from confined phonons in GaAs/AlGaAs quantum wires 

      Bairamov, B. H.; Aydinli, A.; Tanatar, Bilal; Güven, K.; Gurevich, S.; Mel'tser, B. Ya.; Ivanov, S. V.; Kop'ev, P. S.; Smirnitskii, V. B.; Timofeev, F. N. (Academic Press, 1998)
      We report on photoluminescence and Raman scattering performed at low temperature (T = 10 K) on GaAs/Al 0.3Ga 0.7As quantum-well wires with effective wire widths of L = 100.0 and 10.9 nm prepared by molecular beam epitaxial ...
    • Surfactant-mediated growth of semiconductor materials 

      Fong, C. Y.; Watson, M. D.; Yang, L. H.; Çıracı, Salim (Institute of Physics Publishing, 2002)
      During epitaxial growth of semiconducting materials using either molecular beam epitaxy or organometallic vapour deposition, the addition of a surfactant can enhance two-dimensional layer-by-layer growth. This modified ...