Now showing items 1-2 of 2

    • Design considerations for MMIC distributed amplifiers 

      Ergun, S.; Atalar, Abdullah (IEEE, 1994)
      The bandwidth of the input artificial line in a distributed amplifier is the main band limiting factor. By choosing this impedance properly the bandwidth of a distributed amplifier can be maximized. A four section GaAs ...
    • High power K-band GaN on SiC CPW monolithic power amplifier 

      Cengiz O.; Sen O.; Ozbay, E. (Institute of Electrical and Electronics Engineers Inc., 2014)
      This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain ...