Browsing by Keywords "Metallorganic chemical vapor deposition"
Now showing items 1-18 of 18
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Analysis of defect related optical transitions in biased AlGaN/GaN heterostructures
(2010)The optical transitions in AlGaN/GaN heterostructures that are grown by metalorganic chemical vapor deposition (MOCVD) have been investigated in detail by using Hall and room temperature (RT) photoluminescence (PL) ... -
Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD
(Springer New York LLC, 2017)High-resistive GaN (>108 Ω cm) layers have been grown with different buffer structures on 6H-SiC substrate using metalorganic chemical vapor deposition reactor. Different combination of the GaN/AlN super lattice, low ... -
Characterization of AlInN/AlN/GaN heterostructures with different AlN buffer thickness
(Springer New York LLC, 2016)Two AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force ... -
Determination of energy-band offsets between GaN and AlN using excitonic luminescence transition in AlGaN alloys
(American Institute of PhysicsA I P Publishing LLC, 2006)We report the determination of the energy-band offsets between GaN and AlN using the linewidth (full width at half maximum) of an extremely sharp excitonic luminescence transition in Alx Ga1-x N alloy with x=0.18 at 10 K. ... -
Double subband occupation of the two-dimensional electron gas in InxAl1-XN/AlN/GaN/AlN heterostructures with a low indium content (0.064 ≤ x ≤ 0.140) barrier
(Elsevier, 2010-05-08)We present a carrier transport study on low indium content (0.064 ≤ x ≤ 0.140) InxAl1 - xN/AlN/GaN/AlN heterostructures. Experimental Hall data were carried out as a function of temperature (33-300 K) and a magnetic field ... -
The effect of growth conditions on the optical and structural properties of InGaN/GaN MQW LED structures grown by MOCVD
(Gazi University Eti Mahallesi, 2014)Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, ... -
Effect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor deposition
(Wiley - V C H Verlag GmbH & Co. KGaA, 2015)The influences of reactor pressure on the stoichiometry, free carrier concentration, IR and Hall determined mobility, effective optical band edge, and optical phonon modes of HPCVD grown InN films have been analysed and ... -
Electric field dependence of radiative recombination lifetimes in polar InGaN/GaN quantum heterostructures
(IEEE, 2009)We report on external electric field dependence of recombination lifetimes in polar InGaN/GaN quantum heterostructures. In our study, we apply external electric fields one order of magnitude less than and in opposite ... -
Examination of the temperature related structural defects of InGaN/GaN solar cells
(Academic Press, 2015)In this study the effects of the annealing temperature on the InGaN/GaN solar cells with different In-contents grown on sapphire substrate by the Metal Organic Chemical Vapor Deposition (MOCVD) are analyzed by High Resolution ... -
Experimental evaluation of impact ionization coefficients in Al xGa1-xN based avalanche photodiodes
(AIP Publishing LLC, 2006)The authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization ... -
Forward tunneling current in Pt/p-InGaN and Pt/n-InGaN Schottky barriers in a wide temperature range
(Elsevier, 2012-07-27)The current-transport mechanisms of the Pt contacts on p-InGaN and n-InGaN were investigated in a wide temperature range (80-360 K) and in the forward bias regime. It was found that the ideality factor (n) values and ... -
High-speed characterization of solar-blind AlxGa 1-xN p-i-n photodiodes
(Institute of Physics, 2004)We report on the temporal pulse response measurements of solar-blind AlxGa1-xN-based heterojunction p-i-n photodiodes. High-speed characterization of the fabricated photodiodes was carried out at 267 nm. The bandwidth ... -
High-speed visible-blind resonant cavity enhanced AlGaN Schottky photodiodes
(Materials Research Society, 2003)We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/Al 0.2Ga 0.8N Bragg mirror. The devices ... -
Indium rich InGaN solar cells grown by MOCVD
(Springer New York LLC, 2014)This study focuses on both epitaxial growths of InxGa 1-xN epilayers with graded In content, and the performance of solar cells structures grown on sapphire substrate by using metal organic chemical vapor deposition. The ... -
Mg-doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition
(2006)The growth of high-performance Mg-doped p-type Al xGa 1-xN (x = 0.35) layers using low-pressure metal-organic chemical vapour deposition on an AlN/sapphire template is reported. The influence of growth conditions on the ... -
P-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas
(2013)Here, GaN/AlxGa1-xN heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional ... -
Solar-blind A1GaN-based p-i-n photodiodes with low dark current and high detectivity
(IEEE, 2004)We report solar-blind AlxGal1-xN-based heterojunction p-i-n photodiodes with low dark current and high detectivity. After the p+ GaN cap layer was recess etched, measured dark current was below 3 fA for reverse bias values ... -
Surfactant-mediated growth of semiconductor materials
(Institute of Physics Publishing, 2002)During epitaxial growth of semiconducting materials using either molecular beam epitaxy or organometallic vapour deposition, the addition of a surfactant can enhance two-dimensional layer-by-layer growth. This modified ...
