Now showing items 1-11 of 11

    • 2-18 GHZ MMIC distributed amplifiers 

      Ergun, Sanlı (Bilkent University, 1994)
      Using GaAs Monolithic Microwave Integrated Circuit (MMIC) technology three distributed amplifiers are realized. Two of these amplifiers employ single gate FETs and operate in the 2-18 GHz frequency range. They have 4.5 ...
    • Design of an X-band GaN based microstrip MMIC power amplifier 

      Özipek, Ulaş (Bilkent University, 2019-02)
      RF power amplifiers are crucial components of modern radar and communication systems. However, their design poses some challenges due to device limitations in high power and high frequency regime, as well as inherent ...
    • Efficient and accurate EM simulation technique for analysis and design of MMICs 

      Kınayman, N.; Aksun, M. I. (John Wiley & Sons, Inc., 1997)
      A numerically efficient technique for the analysis and design of MMIC circuits is introduced and applied to some realistic problems. The formulation is based on the method of moments (MoM) in the spatial domain, and utilizes ...
    • A ku-band phemt mmic high power amplifier design 

      Değirmenci, Ahmet (Bilkent University, 2014)
      Power amplifiers are regarded as the one of the most important part of the radar and communication systems. In order to satisfy the system specifications, the power amplifiers must provide high output power and high ...
    • MMIC mixers 

      Özgür, Mehmet (Bilkent University, 1996)
      New ways of achieving broadband, low-cost, reliable mixers are investigated. Resistive MESFET mixer topology is the main focus of this work. Despite the accurate modeling difficulties of resistive mode operation, promising ...
    • MMIC VCO design 

      Erdem, Aykut (Bilkent University, 1995)
      In this study, three voltage controlled oscillator (VCO) circuits are realised using Monolithic Microwave Integrated Circuit (MMIC) technology. Two of the VCOs are in the capacitive feedback topology, whereas the last ...
    • Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier 

      Schwindt, R.S.; Kumar V.; Aktas, O.; Lee J.-W.; Adesida I. (2004)
      The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and ...
    • X band GaN based MMIC power amplifier with 36.5dBm P1-dB for space applications 

      Gurdal, A.; Alptug, Yilmaz, B.; Cengiz, O.; Sen, O.; Ozbay, E. (Institute of Electrical and Electronics Engineers, 2018)
      An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is ...
    • X Band GaN Based MMIC power amplifier with 36.5dBm P1-dB for space applications 

      Gurdal, A.; Yilmaz, B. A.; Cengiz, O.; Sen, O.; Ozbay, E. (Institute of Electrical and Electronics Engineers, 2018)
      An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AIGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is ...
    • X-band CPW high power amplifier design by GAN based MMIC technology 

      Yılmaz, Burak Alptuğ (Bilkent University, 2016-06)
      The developments in defense industry, telecommunication and satellite systems have gradually increased the necessities for the small and compact Power Ampli- fiers (PAs) with high output powers and gains. Monolithic Microwave ...
    • X-band low phase noise mmic vco & high power mmic spdt design 

      Osmanoğlu, Sinan (Bilkent University, 2014)
      Generally the tuning bandwidth (BW) of a VCO is smaller than the tuning BW of the resonant circuit itself. Using proper components with right topology can handle this problem. In order to overcome this problem and improve ...