Browsing by Keywords "MMIC"

Now showing items 1-20 of 21

    • 2-18 GHZ MMIC distributed amplifiers 

      Ergun, Sanlı (Bilkent University, 1994)
      Using GaAs Monolithic Microwave Integrated Circuit (MMIC) technology three distributed amplifiers are realized. Two of these amplifiers employ single gate FETs and operate in the 2-18 GHz frequency range. They have 4.5 ...

    • A 6-18 GHz GaN power amplifier MMIC with high gain and high output power density 

      Sütbaş, Batuhan; Özipek, Ulaş; Gürdal, A.; Özbay, Ekmel (IEEE, 2019)
      A three-stage reactively-matched 6-18 GHz power amplifier MMIC design is presented. The design effort is focused on obtaining a low-loss output matching network for a high output power density. Active unit cells consist ...

    • Design of an X-band GaN based microstrip MMIC power amplifier 

      Özipek, Ulaş (Bilkent University, 2019-02)
      RF power amplifiers are crucial components of modern radar and communication systems. However, their design poses some challenges due to device limitations in high power and high frequency regime, as well as inherent ...

    • Efficient and accurate EM simulation technique for analysis and design of MMICs 

      Kınayman, N.; Aksun, M. I. (John Wiley & Sons, Inc., 1997)
      A numerically efficient technique for the analysis and design of MMIC circuits is introduced and applied to some realistic problems. The formulation is based on the method of moments (MoM) in the spatial domain, and utilizes ...

    • From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad-flat no-leads packaged Gallium-Nitride low noise amplifier monolithic microwave integrated circuit 

      Osmanoğlu, Sinan; Özbay, Ekmel (John Wiley & Sons Ltd., 2021-01-19)
      This paper describes an air cavity quad-flat no-leads (QFN) over-molded plastic packaged cascode broadband GaN LNA Monolithic Microwave Integrated Circuit (MMIC) with resistive feedback fabricated with 0.25 μm GaN HEMT ...

    • GaN based LNA MMICs for X-band applications 

      Zafar, Salahuddin; Osmanoğlu, Sinan; Öztürk, Mustafa; Çankaya, Büşra; Yılmaz, Doğan; Kashif, A. U.; Özbay, Ekmel (Institute of Electrical and Electronics Engineers, 2020)
      In this paper, we report two low noise broadband amplifiers based on ABMN's AlGaN/GaN on SiC HEMT technology for X-band applications. Two design topologies, a single-stage (LNA-1) and a two-stage (LNA-2), have been ...

    • GaN HEMT based MMIC design and fabrication for Ka-band applications 

      Akoğlu, Büşra Çankaya (Bilkent University, 2020-07)
      Gallium Nitride (GaN) technology has recently dominated the high power applications in the mm-wave frequencies, and its commercial use is emerging with the upcoming 5G technology. High Electron Mobility Transistors (HEMTs) ...

    • GaN-based single stage low noise amplifier for X-band applications 

      Çağlar, Gizem Tendürüs; Aras, Yunus Erdem; Urfalı, Emirhan; Yılmaz, Doğan; Özbay, Ekmel; Nazlıbilek, Sedat (IEEE, 2022-07-18)
      Source degenerated HEMTs are used to achieve good noise matching and better input return loss without degrading the noise figure and reducing the stability. This work presents an MMIC design for the frequency band of 8–11 ...

    • High efficiency 35 GHz MMICs based on 0.2 μm AlGaN/GaN HEMT technology 

      Akoğlu, Büşra Çankaya; Sütbaş, Batuhan; Özbay, Ekmel (Cambridge University Press, 2022-06-16)
      In this paper, two high efficiency monolithic microwave integrated circuits (MMICs) are demonstrated using NANOTAM's in-house Ka-band fabrication technology. AlGaN/GaN HEMTs with 0.2 μm gate lengths are characterized, and ...

    • A high gain and high efficiency 15 W X-Band GaN power amplifier MMIC 

      Gürdal, Armağan; Özipek, Ulaş; Sütbaş, Batuhan; Özbay, Ekmel (IEEE, 2019)
      An X-band microstrip power amplifier MMIC based on our 0.25 μm AlGaN/GaN on SiC process technology is presented in this work. Fabrication steps, HEMT structure and typical device performance are demonstrated. Design procedure ...

    • High-power and low-loss SPDT switch design using gate-optimized GaN on SiC HEMTs for S-band 5G T/R modules 

      Ertürk, Volkan (Bilkent University, 2022-07)
      Radio frequency (RF) switches are one the fundamental components of modern communication systems. They enable the routing of high-frequency signals into different transmission paths. Therefore, they play a crucial role in ...

    • A ku-band phemt mmic high power amplifier design 

      Değirmenci, Ahmet (Bilkent University, 2014)
      Power amplifiers are regarded as the one of the most important part of the radar and communication systems. In order to satisfy the system specifications, the power amplifiers must provide high output power and high ...

    • MMIC mixers 

      Özgür, Mehmet (Bilkent University, 1996)
      New ways of achieving broadband, low-cost, reliable mixers are investigated. Resistive MESFET mixer topology is the main focus of this work. Despite the accurate modeling difficulties of resistive mode operation, promising ...

    • MMIC VCO design 

      Erdem, Aykut (Bilkent University, 1995)
      In this study, three voltage controlled oscillator (VCO) circuits are realised using Monolithic Microwave Integrated Circuit (MMIC) technology. Two of the VCOs are in the capacitive feedback topology, whereas the last ...

    • Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier 

      Schwindt, R. S.; Kumar, V.; Aktaş, Ozan; Lee, J.-W.; Adesida, I. (IEEE, 2004-10)
      The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and ...

    • Unveiling Tmax inside GaN HEMT based X-band low-noise amplifier by correlating thermal simulations and IR thermographic measurements 

      Zafar, Salahuddin; Durna, Yılmaz; Koçer, Hasan; Akoğlu, Büşra Çankaya; Aras, Yunus Erdem; Odabaşı, Oğuz; Bütün, Bayram; Özbay, Ekmel (IEEE, 2022-12-20)
      This paper presents a method to reveal the channel temperature profile of high electron mobility transistors (HEMTs) in a multi-stage monolithic microwave integrated circuit (MMIC). The device used for this study is a ...

    • X Band GaN Based MMIC power amplifier with 36.5dBm P1-dB for space applications 

      Gürdal, Armağan; Yilmaz, Burak Alptug; Cengiz, Ömer; Şen, Özlem; Özbay, Ekmel (IEEE, 2018)
      An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AIGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is ...

    • X band GaN based MMIC power amplifier with 36.5dBm P1-dB for space applications 

      Gürdal, Armağan; Yılmaz, Burak Alptuğ; Cengiz, Ömer; Sen, Özlem; Özbay, Ekmel (IEEE, 2018)
      An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is ...

    • X-band CPW high power amplifier design by GAN based MMIC technology 

      Yılmaz, Burak Alptuğ (Bilkent University, 2016-06)
      The developments in defense industry, telecommunication and satellite systems have gradually increased the necessities for the small and compact Power Ampli- fiers (PAs) with high output powers and gains. Monolithic Microwave ...

    • X-band high power GaN SPDT MMIC RF switches 

      Osmanoğlu, Sinan; Özbay, Ekmel (IEEE, 2019)
      This paper describes the design results and measured performance of three different high power, low loss and high isolation GaN high electron mobility transistor (HEMT) based single-pole double-throw (SPDT) RF switches. ...