Browsing by Keywords "Low-noise amplifier"
Now showing items 1-5 of 5
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Design and development of X-band GaN-based low-noise amplifiers
(Bilkent University, 2022-12)Gallium nitride (GaN) high electron mobility transistor (HEMT) technology emerged as a preferable candidate for high-power applications. GaN HEMTs on silicon carbide (SiC) substrate provide the best combination of speed ... -
Design and robustness improvement of high-performance LNA using 0.15 μm GaN technology for X-band applications
(John Wiley & Sons Ltd., 2022-07)In this paper, we present a highly robust GaN-based X-band low-noise amplifier (LNA) showing promising small-signal and noise performance as well as good linearity. The LNA is fabricated using in-house 0.15 μm AlGaN/GaN ... -
Design of GaN-based X-band LNAs to achieve sub-1.2 dB noise figure
(Wiley, 2022-08-21)GaAs and SiGe technologies take an edge over GaN-based devices in terms of better noise figure (NF). In this article, we present HEMT topologies and design techniques to achieve a sub-1.2 dB NF for a GaN-based X-band ... -
GaN-on-SiC LNA for UHF and L-Band
(IEEE, 2019)In this paper, we report a broadband GaN HEMT LNA from 100 MHz to 2 GHz, using common source with inductive degeneration and RC feedback topology. Flat gain response of ±1.5 dB variation for 9 V drain voltage with 108 mA ... -
Unveiling Tmax inside GaN HEMT based X-band low-noise amplifier by correlating thermal simulations and IR thermographic measurements
(IEEE, 2022-12-20)This paper presents a method to reveal the channel temperature profile of high electron mobility transistors (HEMTs) in a multi-stage monolithic microwave integrated circuit (MMIC). The device used for this study is a ...