Browsing by Keywords "Low-noise amplifier"

Now showing items 1-5 of 5

    • Design and development of X-band GaN-based low-noise amplifiers 

      Zafar, Salahuddin (Bilkent University, 2022-12)
      Gallium nitride (GaN) high electron mobility transistor (HEMT) technology emerged as a preferable candidate for high-power applications. GaN HEMTs on silicon carbide (SiC) substrate provide the best combination of speed ...

    • Design and robustness improvement of high-performance LNA using 0.15 μm GaN technology for X-band applications 

      Zafar, Salahuddin; Çankaya Akoğlu, Büşra; Aras, Erdem; Yılmaz, Doğan; Nawaz, Muhammad İmran; Kashif, Ahsanullah; Özbay, Ekmel (John Wiley & Sons Ltd., 2022-07)
      In this paper, we present a highly robust GaN-based X-band low-noise amplifier (LNA) showing promising small-signal and noise performance as well as good linearity. The LNA is fabricated using in-house 0.15 μm AlGaN/GaN ...

    • Design of GaN-based X-band LNAs to achieve sub-1.2 dB noise figure 

      Zafar, Salahuddin; Aras, Erdem; Cankaya Akoglu, Busra; Tendurus, Gizem; Nawaz, Muhammad Imran; Kashif, Ahsanullah; Ozbay, Ekmel (Wiley, 2022-08-21)
      GaAs and SiGe technologies take an edge over GaN-based devices in terms of better noise figure (NF). In this article, we present HEMT topologies and design techniques to achieve a sub-1.2 dB NF for a GaN-based X-band ...

    • GaN-on-SiC LNA for UHF and L-Band 

      Zafar, Salahuddin; Osmanoğlu, Sinan; Çankaya, Büşra; Kashif, A.; Özbay, Ekmel (IEEE, 2019)
      In this paper, we report a broadband GaN HEMT LNA from 100 MHz to 2 GHz, using common source with inductive degeneration and RC feedback topology. Flat gain response of ±1.5 dB variation for 9 V drain voltage with 108 mA ...

    • Unveiling Tmax inside GaN HEMT based X-band low-noise amplifier by correlating thermal simulations and IR thermographic measurements 

      Zafar, Salahuddin; Durna, Yılmaz; Koçer, Hasan; Akoğlu, Büşra Çankaya; Aras, Yunus Erdem; Odabaşı, Oğuz; Bütün, Bayram; Özbay, Ekmel (IEEE, 2022-12-20)
      This paper presents a method to reveal the channel temperature profile of high electron mobility transistors (HEMTs) in a multi-stage monolithic microwave integrated circuit (MMIC). The device used for this study is a ...