Now showing items 1-2 of 2

    • Low power Zinc-Oxide based charge trapping memory with embedded silicon nanoparticles 

      Nayfeh, A.; Okyay, Ali; El-Atab, N.; Özcan, Ayşe; Alkış, Sabri (ECS, 2014)
      In this work, a bottom-gate charge trapping memory device with Zinc-Oxide (ZnO) channel and 2-nm Si nanoparticles (Si-NPs) embedded in ZnO charge trapping layer is demonstrated. The active layers of the memory device are ...
    • Memristive behavior in a junctionless flash memory cell 

      Orak, I.; Ürel, M.; Bakan, G.; Dana, A. (American Institute of Physics Inc., 2015)
      We report charge storage based memristive operation of a junctionless thin film flash memory cell when it is operated as a two terminal device by grounding the gate. Unlike memristors based on nanoionics, the presented ...