Browsing by Keywords "Light-emitting-diodes"
Now showing items 1-6 of 6
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Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures
(Optical Society of America, 2013-01-14)We study electroabsorption (EA) behavior of InGaN/GaN quantum structures grown using epitaxial lateral overgrowth (ELOG) in correlation with their dislocation density levels and in comparison to steady state and time-resolved ... -
Efficient nonradiative energy transfer from InGaN/GaN nanopillars to CdSe/ZnS core/shell nanocrystals
(AIP Publishing, 2011-04-20)In this study, we propose and demonstrate efficient electron-hole pair injection from InGaN/GaN multiple quantum well nanopillars (MQW-NPs) to CdSe/ZnS core/shell nanocrystal quantum dots (NQDs) via Forster-type nonradiative ... -
Observation of efficient transfer from Mott-Wannier to Frenkel excitons in a hybrid semiconductor quantum dot-polymer composite at room temperature
(American Institute of Physics, 2010-12-29)Efficient conversion from Mott-Wannier to Frenkel excitons is observed at room temperature. The time-resolved photoluminescence shows that the energy transfer rate and efficiency reach 0.262 ns-1 and 80.9%, respectively. ... -
Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs. polar InGaN/GaN based quantum heterostructures
(Optical Society of America, 2011)We report on the electric field dependent carrier dynamics and optical absorption in nonpolar a-plane GaN-based quantum heterostructures grown on r-plane sapphire, which are surprisingly observed to be opposite to those ... -
Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers
(AIP Publishing, 2014)InGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization induced electric field in the quantum wells, ... -
A two dimensional nanopatterned thin metallic transparent conductor with high transparency from the ultraviolet to the infrared
(American Institute of Physics, 2012-11-01)The optical properties of a two-dimensional nanohole patterned aluminum thin film in hexagonal lattice are studied. The transmission dip can be moved out from the visible range by manipulating the lattice constant. The ...
