Now showing items 1-3 of 3

    • High-speed 1.3 μm GaAs internal photoemission resonant cavity enhanced photodetector 

      Kimukin, I.; Özbay, Ekmel; Biyikli, N.; Kartaloğlu, T.; Aytür, O.; Tuttle, G. (IEEE, Piscataway, NJ, United States, 2000)
      Photoresponse measurements were carried out in the 1100-1500 nm range by using a single-pass monochromator and a tungsten-halogen projection lamp as the light source. Further, high-speed measurements were made with an ...
    • Plasmonically enhanced hot electorn based optoelectronic devices 

      Atar, Fatih Bilge (Bilkent University, 2015-06)
      Hot electron based optoelectronic devices have been regarded as cost-e ective candidates to their conventional counterparts. The efficiency of conventional optoelectronic devices that rely on semiconductor photo-absorbers ...
    • Ultra-low-cost near-infrared photodetectors on silicon 

      Nazirzadeh, M.A.; Atar F.B.; Turgut, B.B.; Okyay, A., K. (SPIE, 2015)
      We demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet large-scale ultralow-cost fabrication requirements. For the detection of infrared photons, we use metal nanoislands that ...