Now showing items 1-3 of 3

    • High-speed 1.3 μm GaAs internal photoemission resonant cavity enhanced photodetector 

      Kimukin, İbrahim; Özbay, Ekmel; Bıyıklı, Necmi; Kartaloğlu, Tolga; Aytür, Orhan; Tuttle, G. (IEEE, 2000)
      Resonant cavity enhanced (RCE) photodetectors offer the possibility of overcoming the low quantum efficiency limitation of conventional photodetectors. The RCE detectors are based on the enhancement of the optical field ...
    • Plasmonically enhanced hot electorn based optoelectronic devices 

      Atar, Fatih Bilge (Bilkent University, 2015-06)
      Hot electron based optoelectronic devices have been regarded as cost-e ective candidates to their conventional counterparts. The efficiency of conventional optoelectronic devices that rely on semiconductor photo-absorbers ...
    • Ultra-low-cost near-infrared photodetectors on silicon 

      Nazirzadeh, M. Amin; Atar, Fatih B.; Turgut, B. Berkan; Okyay, Ali K. (SPIE, 2015-02)
      We demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet large-scale ultralow-cost fabrication requirements. For the detection of infrared photons, we use metal nanoislands that ...