Browsing by Keywords "Interface state"
Now showing items 1-4 of 4
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The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AIN/GaN heterostructures
(Wiley, 2010)(Ni/Au)Alx Ga1-x N/AlN/GaN(x = 0.22) heterostructures with and without a passivation layer of the SiNx were fabricated in order to see the effect of the insulator layer on the main electrical parameters such as zero-bias ... -
On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods
(Elsevier, 2011-06-08)In order to explain the experimental effect of interface states (N ss) and series resistance (Rs) of device on the non-ideal electrical characteristics, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage ... -
On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures
(Elsevier, 2010-10-12)The voltage (V) and frequency (f) dependence of dielectric characteristics such as dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tan δ) and real and imaginary part of electrical modulus (Μ′ and ... -
Ta/Si Schottky diodes fabricated by magnetron sputtering technique
(2010)Electrical properties of Ta/n-Si and Ta/p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier ...
