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    • AlGaN/GaN HEMT-based fully monolithic X-band low noise amplifier 

      Schwindt, R.; Kumar, V.; Aktas, O.; Lee, J. W.; Adesida, I. (Wiley, 2005-04)
      A fully monolithic AlGaN/GaN HEMT-based low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of -7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz. The ...