Now showing items 1-8 of 8

    • A charge inverter for III-nitride light-emitting diodes 

      Zhang Z.-H.; Zhang, Y.; Bi, W.; Geng, C.; Xu S.; Demir, Hilmi Volkan; Sun, X. W. (American Institute of Physics Inc., 2016)
      In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a ...
    • A hole modulator for InGaN/GaN light-emitting diodes 

      Zhang, Z-H.; Kyaw, Z.; Liu W.; Ji Y.; Wang, L.; Tan S.T.; Sun, X. W.; Demir, Hilmi Volkan (American Institute of Physics, 2015)
      The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active ...
    • Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer 

      Zhang, Z.-H.; Tan, S.T.; Liu W.; Ju, Z.; Zheng, K.; Kyaw, Z.; Ji, Y.; Hasanov, N.; Sun X.W.; Demir, Hilmi Volkan (Optical Society of American (OSA), 2013)
      This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating ...
    • Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering 

      Zhang, Zi-Hui; Ju, Z.; Liu W.; Tan S.T.; Ji Y.; Kyaw, Z.; Zhang X.; Hasanov N.; Sun, X. W.; Demir, Hilmi Volkan (Optical Society of America, 2014)
      The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes ...
    • Nanocrystal hybridized white light sources integrated on near UV leds 

      Nizamoğlu, Sedat; Demir, Hilmi Volkan (World Scientific Publishing, 2007)
      We report on CdSe/ZnS core-shell nanocrystal (NC) based white light sources integrated on near-UV InGaN/GaN light emitting diodes (LEDs). We present the design, epitaxial growth, fabrication, integration and characterization ...
    • Nonradiative recombination-Critical in choosing quantum well number for InGaN/GaN light-emitting diodes 

      Zhang, Y.P.; Zhang, Z.-H.; Liu W.; Tan, S.T.; Ju, Z.G.; Zhang X.L.; Ji, Y.; Wang L.C.; Kyaw, Z.; Hasanov, N.; Zhu, B.B.; Lu, S.P.; Sun X.W.; Demir, Hilmi Volkan (Optical Society of American (OSA), 2015)
      In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased ...
    • A PN-type quantum barrier for InGaN/GaN light emitting diodes 

      Zhang, Z.-H.; Tan, S.T.; Ji, Y.; Liu W.; Ju, Z.; Kyaw, Z.; Sun X.W.; Demir, Hilmi Volkan (Optical Society of American (OSA), 2013)
      In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the ...
    • The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes 

      Sheremet V.; Genç M.; Elçi M.; Sheremet N.; Aydınlı A.; Altuntaş I.; Ding K.; Avrutin V.; Özgür Ü.; Morkoç H. (Academic Press, 2017)
      The effect of a transparent ITO current spreading layer on electrical and light output properties of blue InGaN/GaN light emitting diodes (LEDs) is discussed. When finite conductivity of ITO is taken into account, unlike ...