Now showing items 1-2 of 2

    • A hole modulator for InGaN/GaN light-emitting diodes 

      Zhang, Z-H.; Kyaw, Z.; Liu W.; Ji Y.; Wang, L.; Tan S.T.; Sun, X. W.; Demir, Hilmi Volkan (American Institute of Physics, 2015)
      The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active ...
    • P-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas 

      Zhang, Z.-H.; Tiam Tan, S.; Kyaw, Z.; Liu W.; Ji, Y.; Ju, Z.; Zhang X.; Wei Sun X.; Volkan Demir H. (2013)
      Here, GaN/AlxGa1-xN heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional ...