Now showing items 1-2 of 2

    • On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes 

      Zhang Z.-H.; Tan S.T.; Ju, Z.; Liu W.; Ji Y.; Kyaw, Z.; Dikme, Y.; Sun, X. W.; Demir, Hilmi Volkan (IEEE, 2013)
      InGaN/GaN light-emitting diodes (LEDs) make an important class of optoelectronic devices, increasingly used in lighting and displays. Conventional InGaN/GaN LEDs of c-orientation exhibit strong internal polarization fields ...
    • Strain analysis of InGaN/GaN multi quantum well LED structures 

      Cetin, S. S.; Ozturk, M. K.; Ozcelik, S.; Özbay, Ekmel (John Wiley and Sons, 2012-06-22)
      Five period InGaN/GaN multi quantum well (MQW) light emitting diode (LED) structures were grown by a metalorganic chemical vapor deposition (MOCVD) system on c-plane sapphire. The structural characteristics as a strain-stress ...