Now showing items 1-6 of 6

    • Electrostatic force spectroscopy of near surface localized states 

      Dâna, A.; Yamamoto, Y. (Institute of Physics Publishing Ltd., 2005)
      Electrostatic force microscopy at cryogenic temperatures is used to probe the electrostatic interaction of a conductive atomic force microscopy tip and electronic charges trapped in localized states in an insulating layer ...
    • High-performance ALGaN-based visible-blind resonant cavity enhanced Schottky photodiodes 

      Kimukin, İbrahim; Bıyıklı, Necmi; Kartaloğlu, Tolga; Aytür, Orhan; Özbay, Ekmel (Materials Research Society, 2003-04)
      We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were ...
    • ITO-schottky photodiodes for high-performance detection in the UV-IR spectrum 

      Bıyıklı, Necmi; Kimukin, I.; Butun, B.; Aytür, O.; Özbay, Ekmel (IEEE, 2004)
      High-performance vertically illuminated Schottky photodiodes with indium-tin-oxide (ITO) Schottky layers were designed, fabricated, and tested. Ternary and quarternary III-V material systems (AlGaN-GaN, AlGaAs-GaAs, ...
    • Lasing modes of infinite periodic chain of quantum wires 

      Byelobrov, V. O.; Benson, T. M.; Sewell, P.; Altıntaş, Ayhan; Nosich, A. I. (IEEE, 2009-06-07)
      In this paper, we study the scattering and eigenvalue problems for a periodic open optical resonator that is an infinite chain of active circular cylindrical quantum wires standing in free space. The scattering problem is ...
    • Room-temperature scanning Hall probe microscope (RT-SHPM) imaging of garnet films using new high-performance InSb sensors 

      Oral, Ahmet; Kaval, Murat; Dede, Münir; Masuda, H.; Okamoto, A.; Shibasaki, I.; Sandhu, A. (IEEE, 2002)
      The room-temperature scanning Hall probe microscopy (RT-SHPM) imaging of garnet films using high-performance InSb sensors was discussed. The high-performance InSb micro-Hall sensors were fabricated by optical lithography. ...
    • Theoretical assessment of electronic transport in InN 

      Bulutay, C.; Ridley, B. K. (Elsevier, 2004)
      Among the group-III nitrides, InN displays markedly unusual electronic transport characteristics due to its smaller effective mass, high peak velocity and high background electron concentration. First, a non-local empirical ...