Browsing by Keywords "Indium antimonides"
Now showing items 1-10 of 10
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Atomic layer deposited Al 2O 3 passivation of type II InAs/GaSb superlattice photodetectors
(AIP, 2012)Taking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al 2O 3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single ... -
Gibbs free energy assisted passivation layers
(SPIE, 2016)Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical ... -
Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared
(SPIE, 2013)We describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid- Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise ... -
N-structure based on InAs/AlSb/GaSb superlattice photodetectors
(Academic Press, 2015)We have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies ... -
Skin-like self-assembled monolayers on InAs / GaSb superlattice photodetectors
(IOP Institute of Physics Publishing, 2012)We report on the effects of monolayer (ML) thick skin-like octadecanethiol (ODT, CH 3[CH 2] 17SH) on type-II InAs/GaSb MWIR photodetectors. Circumventing the ageing effects of conventional sulfur compounds, we use ODT, a ... -
Strained band edge characteristics from hybrid density functional theory and empirical pseudopotentials: GaAs, GaSb, InAs and InSb
(Institute of Physics Publishing Ltd., 2016)The properties of a semiconductor are drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, ... -
Surface recombination noise in InAs / GaSb superlattice photodiodes
(IOP Institute of Physics Publishing, 2013)The standard Schottky noise approach alone is not sufficient to describe the noise mechanism in an InAs/GaSb superlattice photodetector at reverse negative bias. The additional noise identified appears at surface activation ... -
Theoretical investigation of InAs/GaSb type-II pin superlattice infrared detector in the mid wavelength infrared range
(2013)In this study, we present the theoretical investigation of type-II InAs/GaSb superlattice p-i-n detector. Kronig-Penney and envelope function approximation is used to calculate band gap energy and superlattice minibands. ... -
Thiol passivation of MWIR Type II superlattice photodetectors
(SPIE, 2013)Poor passivation on photodetectors can result in catastrophic failure of the device. Abrupt termination of mesa side walls during pixel definition generates dangling bonds that lead to inversion layers and surface traps ... -
Variable temperature-scanning Hall probe microscopy with GaN/AlGaN two-dimensional electron gas (2DEG) micro Hall sensors in 4.2-425 K range using novel quartz tuning fork AFM feedback
(2008)In this paper, we present the fabrication and variable temperature (VT) operation of Hall sensors, based on GaN/AlGaN heterostructure with a two-dimensional electron gas (2DEG) as an active layer, integrated with quartz ...
