Browsing by Keywords "Indium"
Now showing items 1-12 of 12
-
The effect of growth conditions on the optical and structural properties of InGaN/GaN MQW LED structures grown by MOCVD
(Gazi University Eti Mahallesi, 2014)Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer, which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions, such as the well growth time, ... -
Effect of reactor pressure on optical and electrical properties of InN films grown by high-pressure chemical vapor deposition
(Wiley - V C H Verlag GmbH & Co. KGaA, 2015)The influences of reactor pressure on the stoichiometry, free carrier concentration, IR and Hall determined mobility, effective optical band edge, and optical phonon modes of HPCVD grown InN films have been analysed and ... -
Electronic properties of polypyrrole/polyindene composite/metal junctions
(Elsevier, 1997)Junction properties between conducting polymer composites of polypyrrole/polyindene (PPy/PIn) with different conductivities and metals like Pt, Au, Al and In have been investigated. Rectifying junctions were observed for ... -
Enhanced light scattering with energy downshifting using 16 nm indium nitride nanoparticles for improved thin-film a-Si N-i-P solar cells
(Electrochemical Society Inc., 2015-05)In this work the effect of Indium nitride (InN) nanoparticles (NPs) on the performance of a-Si: H solar cells has been investigated. The average J<inf>sc</inf> of InN NPs coated cells was found 6.76 mA/cm2 which is 16.69% ... -
Fabrication and characterization of liquid metal-based micro-electromechanical DC-contact switch for RF applications
(CRC Press, 2012)We demonstrate that room-temperature liquid metal alloy droplets of Eutectic Gallium Indium (EGaIn) and Gallium Indium Tin alloy (Galinstan) can be actuated using electro-wetting-on-dielectric (EWOD) effect. With the ... -
Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film
(Springer, 2012-07-27)We report the synthesis of colloidal InN nanocrystals (InN-NCs) in organic solution through nanosecond pulsed laser ablation of high pressure chemical vapor deposition-grown InN thin film on GaN/sapphire template substrate. ... -
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
(Optical Society of American (OSA), 2013)This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating ... -
Indium rich InGaN solar cells grown by MOCVD
(Springer New York LLC, 2014)This study focuses on both epitaxial growths of InxGa 1-xN epilayers with graded In content, and the performance of solar cells structures grown on sapphire substrate by using metal organic chemical vapor deposition. The ... -
Low-temperature grown wurtzite InxGa1−xN thin films via hollow cathode plasma-assisted atomic layer deposition
(Royal Society of Chemistry, 2015-08)Herein, we report on atomic layer deposition of ternary InxGa1−xN alloys with different indium contents using a remotely integrated hollow cathode plasma source. Depositions were carried out at 200 °C using organometallic ... -
Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
(Wiley - V C H Verlag GmbH & Co. KGaA, 2015)Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current ... -
Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
(American Institute of Physics Inc., 2016)In this work, we report on self-limiting growth of InN thin films at substrate temperatures as low as 200 °C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The precursors used in growth experiments ... -
Plasmonics: merging photonics and electronics at nanoscale dimensions
((AAAS) American Association for the Advancement of Science, 2006)Electronic circuits provide us with the ability to control the transport and storage of electrons. However, the performance of electronic circuits is now becoming rather limited when digital information needs to be sent ...
