Now showing items 1-8 of 8

    • Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodes 

      Tansel, T.; Kutluer, K.; Salihoglu, Ö.; Aydınlı, Atilla; Aslan, B.; Arikan, B.; Kilinc, M. C.; Ergun, Y.; Serincan, U.; Turan, R. (IEEE, 2012)
      The authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ...
    • Gibbs free energy assisted passivation layers 

      Salihoğlu, Ömer; Tansel, T.; Hoştut, M.; Ergun, Y.; Aydınlı, Atilla (SPIE, 2016)
      Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical ...
    • High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers 

      Ergun, Y.; Hostut, M.; Tansel, T.; Muti, bdullah; Kilic, A.; Turan, R.; Aydınlı, Atilla (SPIE, 2013)
      We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave ...
    • Low dark current N structure superlattice MWIR photodetectors 

      Salihoğlu, O.; Muti, Abdullah; Turan, R.; Ergun, Y.; Aydınlı, Atilla (SPIE, 2014)
      Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R0A) which is directly related to dark current of the detector. Dark current arises ...
    • Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared 

      Tansel, T.; Kutluer, K.; Muti, Abdullah; Salihoğlu, Ömer; Aydınlı, Atilla; Turan, R. (SPIE, 2013)
      We describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid- Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise ...
    • Passivation of type II InAs / GaSb superlattice photodetectors with atomic layer deposited Al2O3 

      Salihoğlu, Ömer; Muti, Abdullah; Kutluer, K.; Tansel, T.; Turan, R.; Kocabaş, Coşkun; Aydınlı, Atilla (SPIE, 2012)
      We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma free ...
    • Skin-like self-assembled monolayers on InAs / GaSb superlattice photodetectors 

      Salihoglu, O.; Muti, A.; Kutluer, K.; Tansel, T.; Turan, R.; Aydınlı, Atilla (IOP Institute of Physics Publishing, 2012)
      We report on the effects of monolayer (ML) thick skin-like octadecanethiol (ODT, CH 3[CH 2] 17SH) on type-II InAs/GaSb MWIR photodetectors. Circumventing the ageing effects of conventional sulfur compounds, we use ODT, a ...
    • Thiol passivation of MWIR Type II superlattice photodetectors 

      Salihoğlu, Ömer; Muti, Abdullah; Aydınlı, Atilla (SPIE, 2013)
      Poor passivation on photodetectors can result in catastrophic failure of the device. Abrupt termination of mesa side walls during pixel definition generates dangling bonds that lead to inversion layers and surface traps ...