Browsing by Keywords "Impurity bands"
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Electrical conduction properties of Si δ-doped GaAs grown by MBE
(2009)The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at ... -
Hall conductance in graphene with point defects
(2013)We investigate the Hall conductance of graphene with point defects within the Kubo formalism, which allows us to calculate the Hall conductance without constraining the Fermi energy to lie in a gap. For pure graphene, which ...