Now showing items 1-2 of 2

    • A charge inverter for III-nitride light-emitting diodes 

      Zhang Z.-H.; Zhang, Y.; Bi, W.; Geng, C.; Xu S.; Demir, Hilmi Volkan; Sun, X. W. (American Institute of Physics Inc., 2016)
      In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a ...
    • A hole modulator for InGaN/GaN light-emitting diodes 

      Zhang, Z-H.; Kyaw, Z.; Liu W.; Ji Y.; Wang, L.; Tan S.T.; Sun, X. W.; Demir, Hilmi Volkan (American Institute of Physics, 2015)
      The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active ...