Now showing items 1-9 of 9

    • Energy relaxation probed by weak antilocalization measurements in GaN heterostructures 

      Cheng H.; Biyikli, N.; Xie J.; Kurdak Ç.; Morko̧ H. (2009)
      Energy relaxation and electron-phonon (e-p) interaction are investigated in wurtzite Al0.15Ga0.85 N/AlN/GaN and Al0.83 In0.17 N/AlN/GaN heterostructures with polarization induced two-dimensional electron gases in the ...
    • Operation of a novel hot electron vertical cavity surface emitting laser 

      Balkan, N.; O'Brien-Davies, A.; Thoms, A. B.; Potter, R. J.; Poolton, N.; Adams, M. J.; Masum J.; Bek, A.; Serpenguzel, A.; Aydinli, A.; Roberts J. S. (SPIE - The International Society for Optical Engineering, 1998-01)
      The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga 1-xAlxAs p- n ...
    • Plasmonically enhanced hot electron based photovoltaic device 

      Atar F.B.; Battal, E.; Aygun L.E.; Daglar, B.; Bayindir, M.; Okyay, A., K. (Optical Society of American (OSA), 2013)
      Hot electron photovoltaics is emerging as a candidate for low cost and ultra thin solar cells. Plasmonic means can be utilized to significantly boost device efficiency. We separately form the tunneling metal-insulator-metal ...
    • Response of polyelectrolyte layers to the SiO2 substrate charging as probed by XPS 

      Conger, C. P.; Suzer, S. (2009)
      A single layer of the Cationic polyelectrolyte poly(allyamine) hydrochloride (PAH) deposited, using the layer-by-layer technique, on a silicon substrate containing 5 nm oxide layer is investigated by XPS while applying an ...
    • Semiconductor-less photovoltaic device 

      Atar F.B.; Battal, E.; Aygun L.E.; Daglar, B.; Bayindir, M.; Okyay, A., K. (2013)
      We demonstrate a novel semiconductor-less photovoltaic device and investigate the plasmonic effects on this device structure. The device is made of metal and dielectric layers and the operation is based on hot carrier ...
    • Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures 

      Tiras, E.; Celik O.; Mutlu, S.; Ardali, S.; Lisesivdin, S.B.; Ozbay, E. (2012)
      The two-dimensional (2D) electron energy relaxation in Al 0.25Ga 0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. ...
    • Theoretical investigations on the energy relaxation in two-dimensional GaN systems 

      Tas, M.; Tanatar, B. (2007)
      We theoretically study the energy relaxation of hot electrons via LO-phonon emission in two-dimensional GaN systems. We employ a model in which electrons and the lattice are in equilibrium separately, and the effective ...
    • Ultra-low-cost near-infrared photodetectors on silicon 

      Nazirzadeh, M.A.; Atar F.B.; Turgut, B.B.; Okyay, A., K. (SPIE, 2015)
      We demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet large-scale ultralow-cost fabrication requirements. For the detection of infrared photons, we use metal nanoislands that ...
    • Ultrafast transient optical loss dynamics in exciton-plasmon nano-assemblies 

      Elkabbash, M.; Rashed, A.R.; Kucukoz, B.; Nguyen, Q.; Karatay, A.; Yaglioglu, G.; Ozbay, E.; Caglayan, H.; Strangi, G. (Royal Society of Chemistry, 2017)
      We study the exciton-plasmon dynamics that lead to optical loss mitigation via ultrafast transient absorption spectroscopy (UTAS) on hybrid aggregates of core-shell quantum dots (QDs) and Au nanoparticles (NPs). We highlight ...