Now showing items 1-7 of 7

    • 100-GHz resonant cavity enhanced Schottky photodiodes 

      Onat, B. M.; Gökkavas, M.; Özbay, E.; Ata, E. P.; Towe, E.; Ünlü, M. S. (Institute of Electrical and Electronics Engineers, 1998)
      Resonant cavity enhanced (RCE) photodiodes are promising candidates for applications in optical communications and interconnects where ultrafast high-efficiency detection is desirable. We have designed and fabricated RCE ...
    • 45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes 

      Biyikli, N.; Kimukin, I.; Aytür, O.; Gökkavas, M.; Ünlü, M. S.; Ozbay, E. (IEEE, 2001)
      High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency ...
    • Design, fabrication and characterization of high-performance solarblind AlGaN photodetectors 

      Ozbay, E. (2005)
      Design, fabrication, and characterization of high-performance AlxGal-xN-based photodetectors for solar-blind applications are reported. AlxGal-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal ...
    • High-performance solar-blind AlGaN photodetectors 

      Ozbay, E.; Tut, T.; Biyikli, N. (2005)
      Design, fabrication, and characterization of high-performance Al xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal ...
    • High-Speed InSb photodetectors on GaAs for mid-IR applications 

      Kimukin, I.; Biyikli, N.; Kartaloǧlu, T.; Aytür, O.; Ozbay, E. (IEEE, 2004)
      We report p-i-n type InSb-based high-speed photodetectors grown on GaAs substrate. Electrical and optical properties of photodetectors with active areas ranging from 7.06 × 10 -6 cm 2 to 2.25 × 10 -4 cm 2 measured at 77 K ...
    • High-speed visible-blind GaN-based ITO-Schottky photodiodes 

      Biyikli, N.; Kimukin I.; Kartaloglu, T.; Aytur O.; Ozbay, E. (2002)
      In this paper we present our efforts on the design, fabrication and characterization of high-speed, visible-blind, GaN-based ultra-violet (UV) photodiodes using indium-tin-oxide (ITO) Schottky contacts. ITO is known as a ...
    • A Wired-AND Current-Mode Logic Circuit Technique in CMOS for Low-Voltage, High-Speed and Mixed-Signal VLSIC 

      Ungan I.E.; Aşkar, M. (1997)
      A wired-AND current-mode logic (WCML) circuit technique in CMOS technology for low-voltage and high-speed VLSI circuits is proposed, and a WCML cell library is developed using standard 0.8 micron CMOS process. The proposed ...