Now showing items 1-2 of 2

    • Silicon-Germanium multi-quantum well photodetectors in the near infrared 

      Onaran, E.; Onbasli, M. C.; Yesilyurt, A.; Yu, H. Y.; Nayfeh, A. M.; Okyay, Ali Kemal (Optical Society of American (OSA), 2012)
      Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. ...
    • Silicon-germanium multi-quantum wells for extended functionality and lower cost integration 

      Onbasli, M.C.; Yesilyurt, Alper; Yu H.Y.; Nayfeh, A.M.; Okyay, Ali Kemal (IEEE, 2010)
      Silicon-Germanium quantum wells were grown in p-i-n layers using a recently developed epitaxial technique. Nanostructural characterization (TEM, XPS, photoluminescence) indicates low-dislocation density, high quality films. ...