Browsing by Keywords "High resolution"
Now showing items 1-8 of 8
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Artifacts related to tip asymmetry in high-resolution atomic force microscopy and scanning tunneling microscopy measurements of graphitic surfaces
(American Institute of Physics Inc., 2015)The effect of tip asymmetry on atomic-resolution scanning tunneling microscopy and atomic force microscopy measurements of graphitic surfaces has been investigated via numerical simulations. Employing a three-dimensional, ... -
Bias in bonding behavior among boron, carbon, and nitrogen atoms in ion implanted a-BN, a-BC, and diamond like carbon films
(2011)In this study, we implanted Nþ and Nþ 2 ions into sputter deposited amorphous boron carbide (a-BC) and diamond like carbon (DLC) thin films in an effort to understand the chemical bonding involved and investigate possible ... -
Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
(IEEE, 2016)The paper consider oxygen contamination of HCPA ALD grown GaN films under an air conditioning and during different time duration. High resolution XPS analysis of HCPA ALD grown GaN films after diluted 1:10 HF(41 %) : H2O ... -
Personal navigation via high-resolution gait-corrected inertial measurement units
(IEEE, 2010)In this paper, a personal micronavigation system that uses high-resolution gait-corrected inertial measurement units is presented. The goal of this paper is to develop a navigation system that uses secondary inertial ... -
Resonant artificial structures to achieve extraordinary transmission at microwaves
(IEEE, 2010)In this contribution, the role of artificial resonant structures in increasing the transmission through sub-wavelength apertures is discussed. Those devices are capable to enhance the aperture equivalent electric and ... -
Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
(2012)We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ... -
SiGe nanocrystal formation in PECVD grown SiOx/Si/Ge/Si/SiOx multilayers
(World Scientific Publishing, 2009)We have studied alternating gennanium-silicon-silicon oxide layers of 41 nm thickness grown on Si substrates by plasma enhanced chemically vapor deposition. The compositions of the grown films were detennined by X-ray ... -
Zaman-frekans dağılımı için çekirdek kestirimi
(IEEE, 2015-05)Bu dokümanda çözünürlüğü yüksek ve çapraz terim içermeyen Cohen sınıfı bir Zaman-frekans (ZF) dağılımının, çekirdek kestirim yöntemi ile elde edilmesi tanıtılmaktadır. Çekirdek kestirimi, başlangıç taslak bir zaman-frekans ...
