Browsing by Keywords "High efficiency"

Now showing items 1-6 of 6

    • 808 nm broad-area laser diodes designed for high efficiency at high-temperature operation 

      Lan, Y.; Yang, G.; Liu, Y.; Zhao, Y.; Wang, Z.; Li, T.; Demir, Abdullah (Institute of Physics Publishing Ltd., 2021-09-21)
      Semiconductor lasers with high power conversion efficiency (PCE) and output power are heavily investigated driven by more energy-efficient commercial applications. In this paper, an asymmetric broad area laser (A-BAL) ...

    • Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures 

      Sarı, Emre; Akyuz, Özgün; Choi, E. -G.; Lee I.-H.; Baek J.H.; Demir, Hilmi Volkan (IEEE, 2010)
      Crystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for ...

    • Epitaxially-stacked high efficiency laser diodes near 905 nm 

      Zhao, Yuliang; Yang, Guowen; Zhao, Yongming; Tang, Song; Lan, Yu; Liu, Yuxian; Wang, Zhenfu; Demir, Abdullah (Institute of Electrical and Electronics Engineers Inc., 2022-12-01)
      We report on studying tunnel junctions and an optical cavity structure for developing epitaxially-stacked high-efficiency 905 nm high-power laser diodes. The GaAs tunnel junctions were explored via simulations and experiments ...

    • High efficiency 35 GHz MMICs based on 0.2 μm AlGaN/GaN HEMT technology 

      Akoğlu, Büşra Çankaya; Sütbaş, Batuhan; Özbay, Ekmel (Cambridge University Press, 2022-06-16)
      In this paper, two high efficiency monolithic microwave integrated circuits (MMICs) are demonstrated using NANOTAM's in-house Ka-band fabrication technology. AlGaN/GaN HEMTs with 0.2 μm gate lengths are characterized, and ...

    • High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared 

      Okyay, Ali Kemal; Onbaşlı, M. Cengiz; Ercan, Burcu; Yu H.-Y.; Ren, S.; Miller, D.A.B.; Saraswat, K.C.; Nayfeh, A.M. (IEEE, 2009)
      Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap ...

    • High-power operation and lateral divergence angle reduction of broad-area laser diodes at 976 nm 

      Liu, Y.; Yang, G.; Wang, Z.; Li, T.; Tang, S.; Zhao, Y.; Lan, Y.; Demir, Abdullah (Elsevier, 2021-04-28)
      Broad-area diode lasers with high output power and low lateral divergence angle are highly desired for extensive scientific and industrial applications. Here, we report on the epitaxial design for higher output power and ...