Browsing by Keywords "Heterostructures"
Now showing items 1-20 of 26
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Alkali metal intercalation in MXene/Graphene heterostructures: a new platform for ion battery applications
(American Chemical Society, 2019)The adsorption and diffusion of Na, K, and Ca atoms on MXene/graphene heterostructures of MXene systems Sc2C(OH)2, Ti2CO2, and V2CO2 are systematically investigated by using first-principles methods. We found that alkali ... -
Colloidal heterostructures of semiconductor quantum wells : synthesis, characterization and applications
(Bilkent University, 2017-06)Colloidal semiconductor quantum wells, also known as nanoplatelets (NPLs), have recently emerged as a new class of colloidal semiconductor nanocrystals enabling fascinating excitonic properties. With their quasi two-dimensional ... -
Dielectric screening effects on electron transport in Ga0.51In0.49P/InxGa1-xAs/GaAs quantum wells
(American Institute of Physics, 2000-04-18)The effects of dielectric screening on the two dimensional polar optical phonon scattering and on electron transport in Ga0.51In0.49P/InxGa1-xAs/GaAs (x=0, 0.15, and 0.25) modulation doped heterostructures and high electron ... -
The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AIN/GaN heterostructures
(Wiley, 2010)(Ni/Au)Alx Ga1-x N/AlN/GaN(x = 0.22) heterostructures with and without a passivation layer of the SiNx were fabricated in order to see the effect of the insulator layer on the main electrical parameters such as zero-bias ... -
Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures
(ELSEVIER, 2010)The forward and reverse bias I-V, C-V, and G/ω-V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al 0.22Ga 0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiN x insulator layer ... -
Energy relaxation probed by weak antilocalization measurements in GaN heterostructures
(2009)Energy relaxation and electron-phonon (e-p) interaction are investigated in wurtzite Al0.15Ga0.85 N/AlN/GaN and Al0.83 In0.17 N/AlN/GaN heterostructures with polarization induced two-dimensional electron gases in the ... -
Energy transfer rate in Coulomb coupled quantum wires
(American Institute of Physics, 1997)We study the energy transfer rate for electrons in two parallel quantum wires due to interwire Coulomb interactions. The energy transfer rate between the wires (similar to the Coulomb drag effect in which momentum transfer ... -
Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures
(Elsevier, 2010)The dielectric properties and AC electrical conductivity (σ ac)of the (Ni/Au)/Al 0.22Ga 0.78N/AlN/GaN heterostructures, with and without the SiNx passivation, have been investigated by capacitance-voltage and conductance-voltage ... -
Germanium for high performance MOSFETs and optical interconnects
(2008-10)It is believed that to continue the scaling of silicon CMOS innovative device structures and new materials have to be created in order to continue the historic progress in information processing and transmission. Recently ... -
Graphene-quantum dot hybrid optoelectronics at visible wavelengths
(American Chemical Society, 2018)With exceptional electronic and gate-tunable optical properties, graphene provides new possibilities for active nanophotonic devices. Requirements of very large carrier density modulation, however, limit the operation of ... -
High sensitivity and multifunctional micro-Hall sensors fabricated using InAlSb/InAsSb/InAlSb heterostructures
(2009)Further diversification of Hall sensor technology requires development of materials with high electron mobility and an ultrathin conducting layer very close to the material's surface. Here, we describe the magnetoresistive ... -
Highly stable multicrown heterostructures of type-II nanoplatelets for ultralow threshold optical gain
(American Chemical Society, 2019)Solution-processed type-II quantum wells exhibit outstanding optical properties, which make them promising candidates for light-generating applications including lasers and LEDs. However, they may suffer from poor colloidal ... -
Improvement of breakdown characteristics in AlGaN/GaN/AlxGa 1-xN HEMT based on a grading Al xGa 1-xN buffer layer
(Wiley, 2010-08-03)To improve the breakdown characteristics of an AlGaN/GaN based high electron mobility transistor (HEMT) for high voltage applications, AlGaN/GaN/Al xGa 1-xN double heterostructure (DH-HEMTs) were designed and fabricated ... -
Impurity incorporation and exchange interactions in Co2+-doped CdSe/CdS core/shell nanoplatelets
(American Institute of Physics, 2019)The intentional incorporation of transition metal impurities into colloidal semiconductor nanocrystals allows an extension of the host material’s functionality. While dopant incorporation has been extensively investigated ... -
Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method
(Springer, 2009-12-03)The electrical conduction mechanisms in various highly resistive GaN layers of Al x Ga1-x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities ... -
Magnetotransport study on AlInN/(GaN)/AlN/GaN heterostructures
(Wiley, 2012-02-27)We report the effect of a thin GaN (2?nm) interlayer on the magnetotransport properties of AlInN/AlN/GaN-based heterostructures. Two samples were prepared (Sample A: AlInN/AlN/GaN and sample B: AlInN/GaN/AlN/GaN). Van der ... -
Metalorganic chemical vapor deposition growth and thermal stability of the AllNN/GaN high electron mobility transistor structure
(IOP Publishing, 2011)The AlxIn1-xN barrier high electron mobility transistor (HEMT) structure has been optimized with varied barrier composition and thickness grown by metalorganic chemical vapor deposition. After optimization, a transistor ... -
Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel
(IOP Publishing, 2010-03-16)The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it is expected ... -
On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes
(IEEE, 2013)InGaN/GaN light-emitting diodes (LEDs) make an important class of optoelectronic devices, increasingly used in lighting and displays. Conventional InGaN/GaN LEDs of c-orientation exhibit strong internal polarization fields ... -
On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures
(Elsevier, 2010-10-12)The voltage (V) and frequency (f) dependence of dielectric characteristics such as dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tan δ) and real and imaginary part of electrical modulus (Μ′ and ...
