Now showing items 1-2 of 2

    • Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon 

      El-Atab, N.; Alqatari, S.; Oruc F.B.; Souier, T.; Chiesa, M.; Okyay, A., K.; Nayfeh, A. (AIP Publishing, 2013)
      A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) ...
    • UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes 

      Alkis, S.; Tekcan, B.; Nayfeh, A.; Okyay, A., K. (IOP Publishing, 2013)
      We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, ...