Browsing by Keywords "Hall effect"

Direct magnetic imaging of ferromagnetic domain structures by room temperature scanning hall probe microscopy using a bismuth micro-Hall probe

Sandhu, A.; Masuda, H.; Oral, A.; Bending, S. J. (Japan Society of Applied Physics, 2001)

A bismuth micro-Hall probe sensor with an integrated scanning tunnelling microscope tip was incorporated into a room temperature scanning Hall probe microscope system and successfully used for the direct magnetic imaging ...

Disorder and localization in the lowest Landau level in the presence of dilute point scatterers

Gedik, Z.; Bayindir, M. (Pergamon Press, 1999)

We study the localization properties of a two-dimensional noninteracting electron gas in the presence of randomly distributed short-range scatterers in very high magnetic fields. We evaluate the participation number of the ...

Double subband occupation of the two-dimensional electron gas in InxAl1-XN/AlN/GaN/AlN heterostructures with a low indium content (0.064 ≤ x ≤ 0.140) barrier

Lisesivdin, S. B.; Tasli, P.; Kasap, M.; Ozturk, M.; Arslan, E.; Ozcelik, S.; Ozbay, E. (Elsevier, 2010-05-08)

We present a carrier transport study on low indium content (0.064 ≤ x ≤ 0.140) InxAl1 - xN/AlN/GaN/AlN heterostructures. Experimental Hall data were carried out as a function of temperature (33-300 K) and a magnetic field ...

DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

Lisesivdin, S. B.; Altuntas, H.; Yildiz, A.; Kasap, M.; Ozbay, E.; Ozcelik, S. (ELSEVIER, 2009-03-17)

Experimental Hall data that were carried out as a function of temperature (60-350 K) and magnetic field (0-1.4 T) were presented for Si-doped low Al content (x=0.14) n-AlxGa1-xAs/GaAs heterostructures that were grown by ...

Electrical conduction properties of Si δ-doped GaAs grown by MBE

Yildiz, A.; Lisesivdin, S.B.; Altuntas H.; Kasap, M.; Ozcelik, S. (2009)

The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at ...

Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure

Lisesivdin, S. B.; Atmaca, G.; Arslan, E.; Çakmakyapan S.; Kazar, Ö.; Bütün, S.; Ul-Hassan, J.; Janzén, E.; Özbay, E. (Elsevier BV, 2014-09)

Hall effect measurements of a graphene-on-SiC system were carried out as a function of temperature (1.8-200 K) at a static magnetic field (0.51) With the analysis of temperature dependent single-field Hall data with the ...

Fabrication and characterization of Bismuth Hall sensors at room temperature

Bayer, Gözde (Bilkent University, 2003)

Small-scale Hall effect devices have attracted a great deal of research interest in recent years. It is well known that bulk single crystal of bismuth exhibit a large magnetoresistance effect and the recognition of this ...

Fractional quantum Hall states in the vicinity of Mott plateaus

UmucalIlar, R. O.; Mueller, E. J. (The American Physical Society, 2010)

We perform variational Monte Carlo calculations to show that bosons in a rotating optical lattice will form analogs of fractional quantum Hall states when the tunneling is sufficiently weak compared to the interactions, ...

Local current distribution at large quantum dots (QDs): A self-consistent screening model

Krishna, P. M.; Siddiki, A.; Güven, K.; Hakioǧlu T. (Elsevier B.V., 2008)

We report the implementation of the self-consistent Thomas-Fermi screening theory, together with the local Ohm's law to a quantum dot system in order to obtain local current distribution within the dot and at the leads. ...

Micromachined III-V cantilevers for AFM-tracking scanning Hall probe microscopy

Brook, A. J.; Bending, S. J.; Pinto, J.; Oral, A.; Ritchie, D.; Beere, H.; Springthorpe, A.; Henini, M. (Institute of Physics, 2003)

In this paper we report the development of a new III-V cantilever-based atomic force sensor with piezoresistive detection and an integrated Hall probe for scanning Hall probe microscopy. We give detailed descriptions of ...

Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel

Gökden, S.; Tülek, R.; Teke, A.; Leach, J. H.; Fan, Q.; Xie, J.; Özgür, Ü.; Morkoç, H.; Lisesivdin, S. B.; Özbay, E. (IOP Publishing, 2010-03-16)

The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it is expected ...

Phase boundary of the boson Mott insulator in a rotating optical lattice

Umucalilar, R. O.; Oktel, M. Ö. (The American Physical Society, 2007)

We consider the Bose-Hubbard model in a two-dimensional rotating optical lattice and investigate the consequences of the effective magnetic field created by rotation. Using a Gutzwiller-type variational wave function, we ...

Real-time imaging of vortex-antivortex annihilation in Bi 2Sr2CaCu2O8+δ single crystals by low temperature scanning hall probe microscopy

Dede, M.; Oral, A.; Yamamoto, T.; Kadowaki, K.; Shtrikman, H. (IOP Institute of Physics Publishing, 2006)

Vortices in superconductors play an important role in operating limits and applications of the superconductors. Scanning Hall probe microscopes have proven themselves to be quantitative and non-invasive tools for investigating ...

Room-temperature scanning Hall probe microscope (RT-SHPM) imaging of garnet films using new high-performance InSb sensors

Oral, A.; Kaval, M.; Dede, M.; Masuda H.; Okamoto, A.; Shibasaki I.; Sandhu, A. (2002)

The room-temperature scanning Hall probe microscopy (RT-SHPM) imaging of garnet films using high-performance InSb sensors was discussed. The high-performance InSb micro-Hall sensors were fabricated by optical lithography. ...