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    • Synthesis and size differentiation of Ge nanocrystals in amorphous SiO 2 

      Aǧan, S.; Çelik-Aktaş, A.; Zuo, J. M.; Dana, A.; Aydinli, A. (Springer, 2006)
      Germanosilicate layers were grown on Si substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed at different temperatures ranging from 700-1010 °C for durations of 5 to 60 min. Transmission electron ...