Browsing by Keywords "Germanium"
Now showing items 1-20 of 38
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Adsorption of group IV elements on graphene, silicene, germanene and stanene: dumbbell formation
(ACS Publications, 2014-12-09)Silicene and germanene derivatives constructed from periodic dumbbell units play a crucial role in multilayers of these honeycomb structures. Using first-principles calculations based on density functional theory, here we ... -
A bean-like formation of germanium nanoparticles inside CNTs by the subsequent operation of colloidal synthesis and catalytic chemical vapor deposition methods
(Wiley, 2018)The first attempts of implanting Ge nanoparticles (Ge NPs) inside iron filled CNTs (IF-CNTs) by a subsequent use of the bench top colloidal synthesis and chemical vapor deposition (CVD) approach is shown. Ge NPs are ... -
Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories
(AIP Publishing, 2008-02)Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents ... -
Dc-switchable and single-nanocrystal-addressable coherent population transfer
(2010)Achieving coherent population transfer in the solid-state is challenging compared to atomic systems due to closely spaced electronic states and fast decoherence. Here, within an atomistic pseudopotential theory, we offer ... -
Defect reduction of Ge on Si by selective epitaxy and hydrogen annealing
(2008-10)We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with S-ilicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). ... -
Effects of silicon and germanium adsorbed on graphene
(A I P Publishing LLC, 2010)Based on the first-principles plane wave calculations, we studied the adsorption of Si and Geon graphene. We found that these atoms are bound to graphene at the bridge site with a significant binding energy, while many ... -
Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers
(Elsevier, 2013)We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in ... -
Femtosecond laser crystallization of amorphous Ge
(American Institute of Physics, 2011)Ultrafast crystallization of amorphous germanium (a-Ge) in ambient has been studied. Plasma enhanced chemical vapor deposition grown a-Ge was irradiated with single femtosecond laser pulses of various durations with a range ... -
A figure of merit for optimization of nanocrystal flash memory design
(2008)Nanocrystals can be used as storage media for carriers in flash memories. The performance of a nanocrystal flash memory depends critically on the choice of nanocrystal size and density as well as on the choice of tunnel ... -
Formation of Ge nanocrystals and SiGe in PECVD grown SiNx: Ge thin films
(Elsevier, 2006)Formation of Ge nanocrystals in SiNx matrices has been studied using plasma enhanced chemical vapor deposition in both as deposited samples as well as in post-vacuum annealed samples. Low temperature and short duration ... -
Ge/SiGe quantum well p-i-n structures for uncooled infrared bolometers
(IEEE, 2011-09-18)The temperature dependence of current is investigated experimentally for silicon-germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance ... -
Germanium for high performance MOSFETs and optical interconnects
(2008-10)It is believed that to continue the scaling of silicon CMOS innovative device structures and new materials have to be created in order to continue the historic progress in information processing and transmission. Recently ... -
Growth of Ge nanoparticles on SiO2 / Si interfaces during annealing of plasma enhanced chemical vapor deposited thin films
(Elsevier B.V., 2007)Multilayer germanosilicate (Ge:SiO2) films have been grown by plasma enhanced chemical vapor deposition. Each Ge:SiO2 layer is separated by a pure SiO2 layer. The samples were heat treated at 900 °C for 15 and 45 min. ... -
Hareket geçmişi görüntüsü yöntemi ile Türkçe işaret dilini tanima uygulaması
(IEEE, 2016-05)İşitme ve konuşma engelli bireylerin toplum içerisinde diger bireylerle sağlıklı şekilde iletişim kurabilmeleri açısından işaret dili çok önemli bir role sahiptir. Ne yazık ki işaret dilinin toplumda sadece duyarlı insanlar ... -
High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared
(IEEE, 2009)Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap ... -
High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration
(IEEE, 2009)We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) ... -
High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration
(Institute of Electrical and Electronics Engineers, 2009)We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime ... -
Interaction of adatoms and molecules with single-layer arsenene phases
(American Chemical Society, 2016-06)Recent studies have shown that arsenic can form single-layer phases in buckled honeycomb as well as symmetric washboard structures, named as arsenene. These structures are stable even in freestanding form and are nonmagnetic ... -
Investigation of new two-dimensional materials derived from stanene
(Elsevier, 2017-09)In this study, we have explored new structures which are derived from stanene. In these new proposed structures, half of the Sn atoms, every other Sn atom in two-dimensional (2D) buckled hexagonal stanene structure, are ... -
Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon
(Elsevier, 2015)A technique to locally grow germanium-on-insulator (GOI) structure on silicon (Si) platform is studied. On (001) Si wafer, silicon dioxide (SiO2) is thermally grown and patterned to define growth window for germanium (Ge). ...
