Browsing by Keywords "Gan"

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

Ju, Z. G.; Liu W.; Zhang Z.-H.; Tan S.T.; Ji Y.; Kyaw, Z.; Zhang, X. L.; Lu, S. P.; Zhang, Y. P.; Zhu B.; Hasanov N.; Sun, X. W.; Demir, Hilmi Volkan (American Chemical Society, 2014-03-21)

InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron blocking layer (QWEBL) are designed and grown by a metal− organic chemical-vapor deposition (MOCVD) system. The proposed QWEBL ...

Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures

Sari, E.; Jang, L. W.; Baek, J. H.; Lee, I. H.; Sun, X. W.; Demir, Hilmi Volkan (Optical Society of America, 2013-01-14)

We study electroabsorption (EA) behavior of InGaN/GaN quantum structures grown using epitaxial lateral overgrowth (ELOG) in correlation with their dislocation density levels and in comparison to steady state and time-resolved ...

On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes

Zhang Z.-H.; Tan S.T.; Ju, Z.; Liu W.; Ji Y.; Kyaw, Z.; Dikme, Y.; Sun, X. W.; Demir, Hilmi Volkan (IEEE, 2013)

InGaN/GaN light-emitting diodes (LEDs) make an important class of optoelectronic devices, increasingly used in lighting and displays. Conventional InGaN/GaN LEDs of c-orientation exhibit strong internal polarization fields ...

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

Zhang, Z. H.; W. L.; Tan, S. T.; Ju, Z.; Ji, Y.; Kyaw, Z.; Zhang, X.; Hasanov, N.; Zhu, B.; Lu, S.; Zhang, Y.; Sun, X. W.; Demir, Hilmi Volkan (Optical Society of America, 2014)

Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, ...

Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs. polar InGaN/GaN based quantum heterostructures

Sari, E.; Nizamoglu, S.; Choi, J H.; Lee, S J.; Baik, K H.; Lee, I. H.; Baek, J. H.; Hwang, S M.; Demir, Hilmi Volkan (Optical Society of America, 2011)

We report on the electric field dependent carrier dynamics and optical absorption in nonpolar a-plane GaN-based quantum heterostructures grown on r-plane sapphire, which are surprisingly observed to be opposite to those ...

Strain analysis of InGaN/GaN multi quantum well LED structures

Cetin, S. S.; Ozturk, M. K.; Ozcelik, S.; Özbay, Ekmel (John Wiley and Sons, 2012-06-22)

Five period InGaN/GaN multi quantum well (MQW) light emitting diode (LED) structures were grown by a metalorganic chemical vapor deposition (MOCVD) system on c-plane sapphire. The structural characteristics as a strain-stress ...

Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition

Ozturk, M. K.; Arslan, E.; Kars, I.; Ozcelik, S.; Özbay, Ekmel (Elsevier, 2013-02)

The strain analysis of GaN film on nitridated Si(111) substrate with different growth times between 0 and 660 s via metal organic chemical vapor deposition (MOCVD) was conducted based on the precise measurement of the ...