Browsing by Keywords "Gan"
Now showing items 1-7 of 7
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Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
(American Chemical Society, 2014-03-21)InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron blocking layer (QWEBL) are designed and grown by a metal− organic chemical-vapor deposition (MOCVD) system. The proposed QWEBL ... -
Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures
(Optical Society of America, 2013-01-14)We study electroabsorption (EA) behavior of InGaN/GaN quantum structures grown using epitaxial lateral overgrowth (ELOG) in correlation with their dislocation density levels and in comparison to steady state and time-resolved ... -
On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes
(IEEE, 2013)InGaN/GaN light-emitting diodes (LEDs) make an important class of optoelectronic devices, increasingly used in lighting and displays. Conventional InGaN/GaN LEDs of c-orientation exhibit strong internal polarization fields ... -
On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
(Optical Society of America, 2014)Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, ... -
Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs. polar InGaN/GaN based quantum heterostructures
(Optical Society of America, 2011)We report on the electric field dependent carrier dynamics and optical absorption in nonpolar a-plane GaN-based quantum heterostructures grown on r-plane sapphire, which are surprisingly observed to be opposite to those ... -
Strain analysis of InGaN/GaN multi quantum well LED structures
(John Wiley and Sons, 2012-06-22)Five period InGaN/GaN multi quantum well (MQW) light emitting diode (LED) structures were grown by a metalorganic chemical vapor deposition (MOCVD) system on c-plane sapphire. The structural characteristics as a strain-stress ... -
Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition
(Elsevier, 2013-02)The strain analysis of GaN film on nitridated Si(111) substrate with different growth times between 0 and 660 s via metal organic chemical vapor deposition (MOCVD) was conducted based on the precise measurement of the ...