Now showing items 1-2 of 2

    • Temperature dependence of the first-order Raman scattering in GaS layered crystals 

      Gasanly, N. M.; Aydınlı, A.; Özkan, H.; Kocabaş, C. (Pergamon Press, 2000)
      The temperature dependence (15-293 K) of the six Raman-active mode frequencies and linewidths in gallium sulfide has been measured in the frequency range from 15 to 380 cm-1. We observed softening and broadening of the ...
    • Trapping centers in undoped GaS layered single crystals 

      Gasanly, N. M.; Aydınlı, Atilla; Yüksek, N. S.; Salihoglu, Ö. (Springer, 2003)
      Nominally undoped p-GaS layered single crystals were grown using the Bridgman technique. Thermally stimulated current measurements in the temperature range 10-300 K were performed at a heating rate of 0.10 K/s. The analysis ...