Browsing by Keywords "Gallium nitride (GaN)"
Now showing items 1-6 of 6
-
Enhancing light extraction efficiency of InGaN/GaN multi quantum well light emitting diodes with embedded two dimensional photonic crystal structures
(Bilkent University, 2010-08)Advance in the growth methods of III-Nitrides and researches in order to eliminate doping problems of gallium nitride (GaN) resulted in high band gap materials with increased crystal quality which have led to tremendous ... -
First principles study of 2D gallium nitride and aluminium nitride in square-octagon structure
(Bilkent University, 2017-08)This thesis, deals with the planar free-standing, single-layer, square-octagon (SO) structures of GaN and AlN. We investigated single-layer and multilayer so-GaN and so-AlN structures, their stability, electronic properties ... -
Improved Tmax estimation in GaN HEMTs using an equivalent hot point approximation
(IEEE, 2020)In this article, heat generation distribution and maximum device temperature of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) are investigated by using the 2-D electrothermal and finite-element method ... -
Investigation of photodetectors based on iii-nitride and metal oxide thin films deposited by atomic layer deposition
(Bilkent University, 2015-05)Gallium Nitride (GaN), one of the most attractive optoelectronic materials today with a direct wide band gap of 3.4eV and high electron saturation velocity of, has found many applications from blue/UV LEDs to UV photodetectors, ... -
Negative differential resistance observation and a new fitting model for electron drift velocity in GaN-based heterostructures
(Institute of Electrical and Electronics Engineers, 2018)The aim of this paper is an investigation of electric field-dependent drift velocity characteristics for Al0.3Ga0.7N/AlN/GaN heterostructures without and with in situ Si3N4 passivation. The nanosecond-pulsed current-voltage ... -
Structural and electronic properties of monolayer and multilayer gallium nitride crystals
(Bilkent University, 2016-09)Three-dimensional (3D) Gallium Nitride (GaN) is a III-V compound semiconductor with direct band gap. It is widely used in light emitting diodes (LED) and has potential to be used numerous optoelectronic applications. In ...
