Browsing by Keywords "Gallium alloys"
Now showing items 1-20 of 22
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Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures
(IEEE, 2010)Crystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for ... -
Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors
(IEEE, 2009-10)Photodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on ... -
Demonstration of flexible thin film transistors with GaN channels
(American Institute of Physics Inc., 2016)We report on the thin film transistors (TFTs) with Gallium Nitride (GaN) channels directly fabricated on flexible substrates. GaN thin films are grown by hollow cathode plasma assisted atomic layer deposition (HCPA-ALD) ... -
Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H-SiC
(Elsevier, 2010-09-25)The influence of growth pressure on the coalescence thickness and the crystal quality of GaN deposited on 4HSiC by low pressure metalorganic vapor phase epitaxy was studied. It was shown that growth pressure has an impact ... -
Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
(IEEE, 2016)GaN thin films grown by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) at two different substrate temperatures (250 and 450 °C) are compared. Effect of two different Ga source materials named as ... -
Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodes
(IEEE, 2012)The authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ... -
Electric field dependence of radiative recombination lifetimes in polar InGaN/GaN quantum heterostructures
(IEEE, 2009)We report on external electric field dependence of recombination lifetimes in polar InGaN/GaN quantum heterostructures. In our study, we apply external electric fields one order of magnitude less than and in opposite ... -
Electrical conduction properties of Si δ-doped GaAs grown by MBE
(2009)The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at ... -
Fabrication and characterization of liquid metal-based micro-electromechanical DC-contact switch for RF applications
(CRC Press, 2012)We demonstrate that room-temperature liquid metal alloy droplets of Eutectic Gallium Indium (EGaIn) and Gallium Indium Tin alloy (Galinstan) can be actuated using electro-wetting-on-dielectric (EWOD) effect. With the ... -
Indium rich InGaN solar cells grown by MOCVD
(Springer New York LLC, 2014)This study focuses on both epitaxial growths of InxGa 1-xN epilayers with graded In content, and the performance of solar cells structures grown on sapphire substrate by using metal organic chemical vapor deposition. The ... -
Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method
(Springer, 2009-12-03)The electrical conduction mechanisms in various highly resistive GaN layers of Al x Ga1-x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities ... -
Low-temperature grown wurtzite InxGa1−xN thin films via hollow cathode plasma-assisted atomic layer deposition
(Royal Society of Chemistry, 2015-08)Herein, we report on atomic layer deposition of ternary InxGa1−xN alloys with different indium contents using a remotely integrated hollow cathode plasma source. Depositions were carried out at 200 °C using organometallic ... -
Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel
(IOP Publishing, 2010-03-16)The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it is expected ... -
N-structure based on InAs/AlSb/GaSb superlattice photodetectors
(Academic Press, 2015)We have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies ... -
Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
(AVS Science and Technology Society, 2014)Gallium nitride (GaN), aluminum nitride (AlN), and AlxGa 1-xN films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200 °C on c-plane sapphire and Si substrates. The dependence of film ... -
Plasmonic band gap structures for surface-enhanced Raman scattering
(Optical Society of American (OSA), 2008)Surface-enhanced Raman Scattering (SERS) of rhodamine 6G (R6G) adsorbed on biharmonic metallic grating structures was studied. Biharmonic metallic gratings include two different grating components, one acting as a coupler ... -
Reconfigurable nested ring-split ring transmitarray unit cell employing the element rotation method by microfluidics
(Institute of Electrical and Electronics Engineers, 2015)A continuously tunable, circularly polarized X-band microfluidic transmitarray unit cell employing the element rotation method is designed and fabricated. The unit cell comprises a double layer nested ring-split ring ... -
Strained band edge characteristics from hybrid density functional theory and empirical pseudopotentials: GaAs, GaSb, InAs and InSb
(Institute of Physics Publishing Ltd., 2016)The properties of a semiconductor are drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, ... -
Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction
(Springer, 2009-04-18)The important structural characteristics of hexagonal GaN in an InGaN/GaN multi quantum well, which was aimed to make a light emitted diode and was grown by metalorganic chemical vapor deposition on c-plain sapphire, are ... -
Study of the power performance of gaN based HEMTs with varying field plate lengths
(North Atlantic University Union, 2015)In this paper, we report the optimum power performance of GaN based high-electron-mobility-transistors (HEMTs) on SiC substrate with the field plates of various dimensions. The AlGaN/GaN HEMTs are fabricated with 0.6 µm ...
