Browsing by Keywords "GaN HEMTs"

Now showing items 1-4 of 4

    • Design of multi-octave band GaN-HEMT power amplifier 

      Eren, Gulesin; Şen, Özlem A.; Bölükbaş, Basar; Kurt, Gökhan; Arıcan, Orkun; Cengiz, Ömer; Ünal, Sıla T.K.; Durmuş, Yıldırım; Özbay, Ekmel (IEEE, 2012)
      This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride ...

    • Study of the power performance of gaN based HEMTs with varying field plate lengths 

      Kurt G.; Toprak, A.; Sen O.A.; Özbay, Ekmel (North Atlantic University Union, 2015)
      In this paper, we report the optimum power performance of GaN based high-electron-mobility-transistors (HEMTs) on SiC substrate with the field plates of various dimensions. The AlGaN/GaN HEMTs are fabricated with 0.6 µm ...

    • X band GaN based MMIC power amplifier with 36.5dBm P1-dB for space applications 

      Gürdal, Armağan; Yılmaz, Burak Alptuğ; Cengiz, Ömer; Sen, Özlem; Özbay, Ekmel (IEEE, 2018)
      An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is ...

    • X Band GaN Based MMIC power amplifier with 36.5dBm P1-dB for space applications 

      Gürdal, Armağan; Yilmaz, Burak Alptug; Cengiz, Ömer; Şen, Özlem; Özbay, Ekmel (IEEE, 2018)
      An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AIGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is ...