Browsing by Keywords "GaN HEMTs"
Now showing items 1-4 of 4
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Design of multi-octave band GaN-HEMT power amplifier
(IEEE, 2012)This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride ... -
Study of the power performance of gaN based HEMTs with varying field plate lengths
(North Atlantic University Union, 2015)In this paper, we report the optimum power performance of GaN based high-electron-mobility-transistors (HEMTs) on SiC substrate with the field plates of various dimensions. The AlGaN/GaN HEMTs are fabricated with 0.6 µm ... -
X Band GaN Based MMIC power amplifier with 36.5dBm P1-dB for space applications
(IEEE, 2018)An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AIGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is ... -
X band GaN based MMIC power amplifier with 36.5dBm P1-dB for space applications
(IEEE, 2018)An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is ...