Browsing by Keywords "GaN"
Now showing items 1-20 of 39
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A1GaN UV photodetectors : from micro to nano
(Bilkent University, 2011)The absorption edge of AlGaN based alloys can be tuned from deep UV to near UV by changing the composition. This enables the use of the material in various technological applications such as military, environmental ... -
Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors
(Elsevier BV, 2014)A report on GaN based metal insulator semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with atomic layer deposited (ALD) 5-nm-thick HfO2 insulating layer is presented. Very low dark current of 2.24 × 10-11 A and ... -
Blue InGaN/GaN-based quantum electroabsorption modulators
(IEEE, 2006)We introduce InGaN/GaN-based quantum electroabsorption modulator that incorporates ∼5 nm thick In0.35Ga0.65N/GaN quantum structures for operation in the blue spectral range of 420-430 nm. This device exhibits an optical ... -
Broadband GaN LNA MMIC development with the micro/nano process development by kink-effect in S22 consideration
(Bilkent University, 2021-01)Broadband low noise amplifiers (LNA) are one of the key components of the nu-merous applications such as communication, electronic warfare, and radar. The requirements for higher bandwidth, higher speed, higher survivability, ... -
Complementary and alternative technique for the determination of electron effective mass: Quantum hall effect
(Taylor & Francis Inc., 2016)The quantum Hall effect measurements in the AlInN/AlN/GaN heterostructure are studied in the temperature range from 1.8 K to 14 K and a magnetic field up to 11 T. The quantized two-dimensional electron gas was placed at ... -
Design, fabrication, and characterization of normally-off GaN HEMTS
(Bilkent University, 2019-07)GaN-based high-electron-mobility transistors (HEMTs) have been developing rapidly from the time when they were first demonstrated in the 1990s. They have consistently been presented as a displacement technology to silicon ... -
Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs
(Institute of Physics Publishing, 2018)This work analyzes the effect of various gate structures on the DC and radio frequency (RF) performance of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMT devices with a 3 μm drain-to-source spacing, ... -
Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
(IEEE, 2016)GaN thin films grown by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) at two different substrate temperatures (250 and 450 °C) are compared. Effect of two different Ga source materials named as ... -
Electrical properties and device applications of atomic layer deposited ZnO and GaN thin films
(Bilkent University, 2014)Zinc oxide (ZnO), a semiconducting material with a wide band gap of 3.37 eV, has become a promising material for wide range of electronic and optoelectronic applications. One of the most important properties of this ... -
Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector
(Institute of Physics Publishing, 2016)We report on the fabrication and characterization of a Schottky ultraviolet graphene/AlGaN/GaN photodetector (PD). The fabricated device clearly exhibits rectification behaviour, indicating that the Schottky barrier is ... -
Fabrication of ALN/GAN MIS-Hemt with SIN as gate dielectric and performance enhancement with ALD deposited alumina
(Bilkent University, 2016-10)Silicon based transistors reached a limit, especially for high power and high frequency applications due to their relatively low bandgap and breakdown voltage. With its higher bandgap and breakdown voltage, GaN based ... -
From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad-flat no-leads packaged Gallium-Nitride low noise amplifier monolithic microwave integrated circuit
(John Wiley & Sons Ltd., 2021-01-19)This paper describes an air cavity quad-flat no-leads (QFN) over-molded plastic packaged cascode broadband GaN LNA Monolithic Microwave Integrated Circuit (MMIC) with resistive feedback fabricated with 0.25 μm GaN HEMT ... -
Functionalization of group V monolayers and their compounds: alloying, doping and surface modification
(Bilkent University, 2020-11)There has been growing interest during the last decade in two-dimensional (2D) materials due to their important roles in various scientific and technological applications such as detectors, lasers and light emitting diodes. ... -
GaN/AlGaN-based UV photodetectors with performances exceeding the PMTS
(Bilkent University, 2008)The recent developments in high Al-content AlxGa1−xN material growth technology made it possible to fabricate high performance solar-blind photodetectors operating in the ultraviolet (UV) spectral region with improved receiver ... -
The growth, fabrication and characterization of high performance AI(formula)Ga(formula)N metal-semiconductor-metal photodiodes
(Bilkent University, 2006)High performance UV photodetectors have attracted unwarranted attention for various applications, such as in military, telecommunication, and biological imaging, as an AlxGa1-xN material system is also rather suitable ... -
High-power and low-loss SPDT switch design using gate-optimized GaN on SiC HEMTs for S-band 5G T/R modules
(Bilkent University, 2022-07)Radio frequency (RF) switches are one the fundamental components of modern communication systems. They enable the routing of high-frequency signals into different transmission paths. Therefore, they play a crucial role in ... -
High-speed visible-blind GaN-based ITO-Schottky photodiodes
(SPIE, 2002)In this paper we present our efforts on the design, fabrication and characterization of high-speed, visible-blind, GaN-based ultra-violet (UV) photodiodes using indium-tin-oxide (ITO) Schottky contacts. ITO is known as a ... -
Improvement of breakdown characteristics in AlGaN/GaN/AlxGa 1-xN HEMT based on a grading Al xGa 1-xN buffer layer
(Wiley, 2010-08-03)To improve the breakdown characteristics of an AlGaN/GaN based high electron mobility transistor (HEMT) for high voltage applications, AlGaN/GaN/Al xGa 1-xN double heterostructure (DH-HEMTs) were designed and fabricated ... -
InGaN green light emitting diodes with deposited nanoparticles
(Elsevier BV, 2007)We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal-organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of ... -
Investigation of a hybrid approach for normally-off GaN HEMTs using fluorine treatment and recess etch techniques
(Institute of Electrical and Electronics Engineers Inc., 2019)A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch ...
