Now showing items 1-7 of 7

    • Electrical conduction properties of Si δ-doped GaAs grown by MBE 

      Yildiz, A.; Lisesivdin, S.B.; Altuntas H.; Kasap, M.; Ozcelik, S. (2009)
      The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at ...
    • Fabrication, characterization, and extraction of GaAs mesfets 

      Ata, Erhan Polatkan (Bilkent University, 1994)
      Metal Semiconductor Field Effect Transistor (MESFET) is the most widely used active element of today’s microwave industry. After development of the MESFET technology, the microwave industry gained a high acceleration, ...
    • Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures 

      Akca, B.I.; Dana, A.; Aydinli, A.; Rossetti, M.; Li L.; Dagli, N.; Fiore, A. (Optical Society of America, 2007)
      The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs ...
    • Modulation in InAs quantum dot waveguides 

      Imran Akca, B.; Dana, A.; Aydinli, A.; Rossetti, M.; Li L.; Fiore, A.; Dagli, N. (Optical Society of America, 2007)
      Modulation in molecular beam epitaxy grown self-assembled InAs quantum dot waveguides have been studied at 1500 nm as a function of wavelength and voltage. Enhanced electro-optic coefficients compared to bulk GaAs were ...
    • Room temperature scanning Hall probe microscopy using GaAs/AlGaAs and Bi micro-hall probes 

      Sandhu, A.; Masuda, H.; Oral, A.; Yamada, A.; Konagai, M. (Elsevier Science B.V., 2002)
      A room temperature scanning Hall probe microscope system utilizing GaAs/AlGaAs and bismuth micro-Hall probes was used for magnetic imaging of ferromagnetic domain structures on the surfaces of crystalline thin film garnets ...
    • Stability of two dimensional (2D) structures based on GaAs 

      Erol, Mustafa (Bilkent University, 2015-08)
      Graphene is a two dimensional material isolated for the first time in 2004. After this, two dimensional materials has become an appealing research area for the scientists because of their exotic properties. In search ...
    • X-band low phase noise mmic vco & high power mmic spdt design 

      Osmanoğlu, Sinan (Bilkent University, 2014)
      Generally the tuning bandwidth (BW) of a VCO is smaller than the tuning BW of the resonant circuit itself. Using proper components with right topology can handle this problem. In order to overcome this problem and improve ...