Browsing by Keywords "Frequency dependence"
Now showing items 1-6 of 6
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Dynamical XPS measurements for probing photoinduced voltage changes
(2010)Photoillumination with 405 nm laser causes shifts in XPS peaks of n-Si(100), and CdS. To distinguish between surface photovoltage (SPV), and charging, dynamical measurements are performed, while sample is subjected to ... -
The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AIN/GaN heterostructures
(2010)(Ni/Au)Alx Ga1-x N/AlN/GaN(x = 0.22) heterostructures with and without a passivation layer of the SiNx were fabricated in order to see the effect of the insulator layer on the main electrical parameters such as zero-bias ... -
Methods for probing charging properties of polymeric materials using XPS
(2010)Various thin polystyrene, PS, and poly(methyl methacrylate), PMMA and PS + PMMA blend films have been examined using the technique of recording X-ray photoelectron spectrum while the sample is subjected to ±10 V d.c. bias, ... -
Temperature-dependent profile of the surface states and series resistance in (Ni/Au)/AIGaN/AIN/GaN heterostructures
(Wiley, 2010-03-28)The profile of the interface state densities(N ss) and series resistances (R s) effect on capacitance-voltage (C-V) and conductancevoltage (G/ω-V) of (Ni/Au)/Al xGa 1-xN/AIN/ GaN heterostructures as a function of the ... -
Two-dimensional x-ray photoelectron spectroscopy for composite surface analysis
(2008)We describe a method for obtaining two-dimensional X-ray photoelectron spectroscopic data derived from the frequency dependence of the XPS peaks recorded under electrical square-wave pulses, which control and affect the ... -
XPS analysis with pulsed voltage stimuli
(2006)We record XPS spectra while applying 0 to +10 V or 0 to -10 V square pulses to the sample rod, which normally results in twinning of all peaks at correspondingly increased (for +10 V) or decreased (for -10 V) binding ...
