Browsing by Keywords "Flash memory"
Now showing items 1-9 of 9
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Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories
(AIP Publishing, 2008-02)Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents ... -
Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide
(Springer New York LLC, 2015)In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al2O3/HfO2 tunnel oxide and we compare it to the ... -
High performance floating gate memories using graphene as charge storage medium and atomic layer deposited high-k dielectric layers as tunnel barrier
(Bilkent University, 2013)With the ongoing development in portable electronic devices, low power consumption, improved data retention rate and higher operation speed are the merits demanded by modern non-volatile memory technology. Flash ... -
Matrix density effect on morphology of germanium nanocrystals embedded in silicon dioxide thin films
(Materials Research Society, 2011)Flash type electronic memories are the preferred format in code storage at complex programs running on fast processors and larger media files in portable electronics due to fast write/read operations, long rewrite life, ... -
Memory effect by charging of ultra‐small 2‐nm laser‐synthesized solution processable Si‐nanoparticles embedded in Si–Al2O3–SiO2 structure
(Wiley-VCH Verlag, 2015)A memory structure containing ultra-small 2-nm laser-synthesized silicon nanoparticles is demonstrated. The Si-nanoparticles are embedded between an atomic layer deposited high-κ dielectric Al<inf>2</inf>O<inf>3</inf> layer ... -
Memristive behavior in a junctionless flash memory cell
(American Institute of Physics Inc., 2015)We report charge storage based memristive operation of a junctionless thin film flash memory cell when it is operated as a two terminal device by grounding the gate. Unlike memristors based on nanoionics, the presented ... -
Technical note-optimal structural results for assemble-to-order generalized M-Systems
(INFORMS Inst.for Operations Res.and the Management Sciences, 2014)We consider an assemble-to-order generalized M-system with multiple components and multiple products, batch ordering of components, random lead times, and lost sales. We model the system as an infinite-horizon Markov ... -
Thin-film ZnO charge-trapping memory cell grown in a single ALD step
(Institute of Electrical and Electronics Engineers, 2012-10-26)A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first ... -
Two-nanometer laser synthesized Si-nanoparticles for low power memory applications
(Springer International Publishing, 2016)Current flash memory devices are expected to face two major challenges in the near future: density and voltage scaling. The density of the memory is related to the gate length scaling which is constrained by the gate stack, ...
