Now showing items 1-3 of 3

    • Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs 

      Toprak A.; Osmanoǧlu, S.; Öztürk, M.; Yılmaz, D.; Cengiz, Ö.; Şen, Ö.; Bütün, B.; Özcan, Ş.; Özbay, Ekmel (Institute of Physics Publishing, 2018)
      This work analyzes the effect of various gate structures on the DC and radio frequency (RF) performance of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMT devices with a 3 μm drain-to-source spacing, ...
    • Structural field plate length optimization for high power applications 

      Toprak, Ahmet; Kurt, Gökhan; Şen, Özlem A.; Özbay, Ekmel (IEEE, 2014)
      In this work, we report GaN high-electron-mobility-transistors (HEMTs) on SiC with field plates of various dimensions for optimum performance. 0.6 μm gate length, 3 μm drain source space AlGaN/GaN HEMTs with field-plate ...
    • Study of the power performance of gaN based HEMTs with varying field plate lengths 

      Kurt G.; Toprak, A.; Sen O.A.; Özbay, Ekmel (North Atlantic University Union, 2015)
      In this paper, we report the optimum power performance of GaN based high-electron-mobility-transistors (HEMTs) on SiC substrate with the field plates of various dimensions. The AlGaN/GaN HEMTs are fabricated with 0.6 µm ...