Browsing by Keywords "Field effect transistors"
Now showing items 1-7 of 7
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Design considerations for MMIC distributed amplifiers
(IEEE, 1994)The bandwidth of the input artificial line in a distributed amplifier is the main band limiting factor. By choosing this impedance properly the bandwidth of a distributed amplifier can be maximized. A four section GaAs ... -
Effect of chalcogens on electronic and photophysical properties of vinylene-based diketopyrrolopyrrole copolymers
(American Chemical Society, 2015)Three vinylene linked diketopyrrolopyrrole based donor−acceptor (D−A) copolymers have been synthesized with phenyl, thienyl, and selenyl units as donors. Optical and electronic properties were investigated with UV−vis ... -
Effects of field plate on the maximum temperature and temperature distribution for gan HEMT devices
(American Society of Mechanical Engineers, 2016)Field plated GaN high electron mobility transistors (HEMTs) are widely preferred amongst other GaN HEMT devices because of their ability to regulate electric field at high power densities. When operated at high power ... -
Structural field plate length optimization for high power applications
(Institute of Electrical and Electronics Engineers Inc., 2014)In this work, we report GaN high-electron-mobility-transistors (HEMTs) on SiC with field plates of various dimensions for optimum performance. 0.6 μm gate length, 3 μm drain source space AlGaN/GaN HEMTs with field-plate ... -
Study of the power performance of gaN based HEMTs with varying field plate lengths
(North Atlantic University Union, 2015)In this paper, we report the optimum power performance of GaN based high-electron-mobility-transistors (HEMTs) on SiC substrate with the field plates of various dimensions. The AlGaN/GaN HEMTs are fabricated with 0.6 µm ... -
Trends in molecular design strategies for ambient stable n-channel organic field effect transistors
(Royal Society of Chemistry, 2017)In recent years, organic semiconducting materials have enabled technological innovation in the field of flexible electronics. Substantial optimization and development of new π-conjugated materials has resulted in the ... -
Two-nanometer laser synthesized Si-nanoparticles for low power memory applications
(Springer International Publishing, 2016)Current flash memory devices are expected to face two major challenges in the near future: density and voltage scaling. The density of the memory is related to the gate length scaling which is constrained by the gate stack, ...
