Now showing items 1-2 of 2

    • Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD 

      Arslan, E.; Öztürk, M. K.; Tıraş, E.; Tıraş, T.; Özçelik, S.; Özbay, Ekmel (Springer New York LLC, 2017)
      High-resistive GaN (>108 Ω cm) layers have been grown with different buffer structures on 6H-SiC substrate using metalorganic chemical vapor deposition reactor. Different combination of the GaN/AlN super lattice, low ...
    • Indium rich InGaN solar cells grown by MOCVD 

      Çakmak, H.; Arslan, E.; Rudziński, M.; Demirel, P.; Unalan, H. E.; Strupiński, W.; Turan, R.; Öztürk, M.; Özbay, Ekmel (Springer New York LLC, 2014)
      This study focuses on both epitaxial growths of InxGa 1-xN epilayers with graded In content, and the performance of solar cells structures grown on sapphire substrate by using metal organic chemical vapor deposition. The ...